公开(公告)号：US20230132598A1

公开(公告)日：2023-05-04

申请号：US18090634

申请日：2022-12-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Erika TAKAHASHI ,  Katsuaki TOCHIBAYASHI ,  Ryo ARASAWA

IPC: H01L29/24 ,  H10B12/00 ,  H01L27/12

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

公开(公告)号：US20210175334A1

公开(公告)日：2021-06-10

申请号：US17047236

申请日：2019-04-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Erika TAKAHASHI ,  Katsuaki TOCHIBAYASHI ,  Ryo ARASAWA

IPC: H01L29/24 ,  H01L27/12 ,  H01L27/108

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

公开(公告)号：US20130234131A1

公开(公告)日：2013-09-12

申请号：US13780325

申请日：2013-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI

IPC: H01L29/786

CPC classification number: H01L29/786 ,  H01L29/7869

Abstract: A semiconductor device which has stable electrical characteristics and high reliability is provided. The semiconductor device includes a gate electrode over an insulating surface, a gate insulating film over the gate electrode, a semiconductor film which is over the gate insulating film and overlaps with the gate electrode, and a protective insulating film over the semiconductor film; and the protective insulating film includes a crystalline insulating film and an aluminum oxide film over the crystalline insulating film.

Abstract translation: 提供了具有稳定的电气特性和高可靠性的半导体器件。 半导体器件包括绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，栅极绝缘膜上方并与栅电极重叠的半导体膜，以及半导体膜上的保护绝缘膜; 并且所述保护绝缘膜在所述结晶绝缘膜上包括结晶绝缘膜和氧化铝膜。

公开(公告)号：US20130126861A1

公开(公告)日：2013-05-23

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI ,  Yuki IMOTO ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/36

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。