公开(公告)号：US20230047805A1

公开(公告)日：2023-02-16

申请号：US17791968

申请日：2021-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with a high on-state current is provided. An oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an interlayer insulating film positioned to cover the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the oxide semiconductor film; a barrier insulating film over the oxide semiconductor film; and a gate electrode over the gate insulating film are included. The barrier insulating film is positioned between the source electrode and the gate insulating film and between the drain electrode and the gate electrode. An opening is formed in the interlayer insulating film so as to overlap with a region between the source electrode and the drain electrode. The barrier insulating film, the gate insulating film, and the gate electrode are positioned in the opening of the interlayer insulating film. Above the barrier insulating film, the gate insulating film is in contact with the interlayer insulating film.

公开(公告)号：US20220271168A1

公开(公告)日：2022-08-25

申请号：US17628296

申请日：2020-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Takashi HIROSE ,  Yoshihiro KOMATSU ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

公开(公告)号：US20220123150A1

公开(公告)日：2022-04-21

申请号：US17567812

申请日：2022-01-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Katsuaki TOCHIBAYASHI ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.

公开(公告)号：US20220115409A1

公开(公告)日：2022-04-14

申请号：US17557185

申请日：2021-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Tomoaki MORIWAKA ,  Jiro NISHIDA ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L23/522 ,  H01L27/13

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20200266107A1

公开(公告)日：2020-08-20

申请号：US16649890

申请日：2018-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Hiromi SAWAI ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI

IPC: H01L21/8234 ,  H01L29/786

Abstract: A semiconductor device that can have favorable electrical characteristics and can be highly integrated is provided.The semiconductor device includes a first insulator; a second insulator over the first insulator; an oxide over the second insulator; a first conductor and a second conductor over the oxide; a third insulator over the oxide; a third conductor positioned over the third insulator and overlapping with the oxide; a fourth insulator in contact with the second insulator, a side surface of the oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, a top surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with a top surface of the third insulator and a top surface of the third conductor, and a top surface of the fourth insulator is in contact with the fifth insulator.

公开(公告)号：US20140327000A1

公开(公告)日：2014-11-06

申请号：US14336127

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Katsuaki TOCHIBAYASHI ,  Satoshi HIGANO ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/78693 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/465 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.

Abstract translation: 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件以实现高生产率。 在制造其中栅极电极层，栅极绝缘膜和氧化物半导体膜依次层叠的晶体管和提供与氧化物半导体膜接触的源电极层和漏电极层的晶体管的半导体器件的制造中， 通过蚀刻步骤形成源电极层和漏电极层，然后进行用于除去由蚀刻步骤产生并存在于氧化物半导体膜的表面及其附近的杂质的步骤。

公开(公告)号：US20240154039A1

公开(公告)日：2024-05-09

申请号：US18403791

申请日：2024-01-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO ,  Kentaro SUGAYA ,  Naoto YAMADE

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/31

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US20230034397A1

公开(公告)日：2023-02-02

申请号：US17783071

申请日：2020-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor including a gate electrode, a source electrode, and a drain electrode; a first insulator over the transistor; a second insulator over the first insulator; a third insulator over the second insulator; a first electrode in contact with the top surface of the source electrode; and a second electrode in contact with the top surface of the drain electrode. The second insulator includes a first opening portion overlapping with the source electrode and a second opening portion overlapping with the drain electrode. The third insulator is in contact with the side surface of the second insulator and the top surface of the first insulator inside the first opening portion and the second opening portion. The first electrode is positioned through the first opening portion. The second electrode is positioned through the second opening portion.

公开(公告)号：US20220077322A1

公开(公告)日：2022-03-10

申请号：US17428753

申请日：2020-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66

Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

公开(公告)号：US20210384326A1

公开(公告)日：2021-12-09

申请号：US17285782

申请日：2019-10-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Kunihiro FUKUSHIMA ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO

IPC: H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02

Abstract: A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator, forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator, cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator, and processing the opening to have a cylindrical shape or an inverted cone shape.