公开(公告)号：US20220077317A1

公开(公告)日：2022-03-10

申请号：US17414490

申请日：2019-11-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI ,  Tsutomu MURAKAWA ,  Erika TAKAHASHI

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

公开(公告)号：US20210242345A1

公开(公告)日：2021-08-05

申请号：US17049042

申请日：2019-05-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Hiroaki HONDA ,  Kentaro SUGAYA ,  Shinya SASAGAWA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor. A region of the first region in contact with the second oxide includes a region in which an atomic ratio of aluminum (Al) to the element M is less than 0.1.

公开(公告)号：US20220077322A1

公开(公告)日：2022-03-10

申请号：US17428753

申请日：2020-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Tsutomu MURAKAWA ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/66

Abstract: A semiconductor device with small fluctuations in transistor characteristics can be provided. The semiconductor device includes a first oxide, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide and between the second oxide and the third oxide, a first insulator over the fourth oxide, and a third conductor over the first insulator. The first oxide includes a groove in a region not overlapping with the second oxide and the third oxide. The first oxide includes a first layered crystal substantially parallel to the surface where the first oxide is formed. In the groove, the fourth oxide includes a second layered crystal substantially parallel to the surface where the first oxide is formed. A concentration of aluminum atoms at an interface between the first oxide and the fourth oxide and in the vicinity of the interface is less than or equal to 5.0 atomic %.

公开(公告)号：US20210408298A1

公开(公告)日：2021-12-30

申请号：US17295693

申请日：2019-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Hideomi SUZAWA ,  Shinya SASAGAWA

IPC: H01L29/786

Abstract: A semiconductor device with high reliability is provided. A first conductor and a second conductor are provided over and in contact with a first oxide. A first insulator is provided to cover the first oxide, a first conductor, and a second conductor. The first insulator includes an opening portion. The first oxide is exposed on a bottom surface of the opening portion. A side surface of the first conductor and a side surface of the second conductor are exposed on a side surface of the opening portion. A second oxide is provided in contact with the first oxide, the side surface of the first conductor, and the second conductor in the opening portion. A second insulator is provided in the opening portion with the second oxide therebetween. A third conductor is provided in the opening portion with the second insulator therebetween. Lower end portions of the side surface of the first conductor and the second conductor touch an ellipse or a circle with a center above the first oxide.

公开(公告)号：US20210384326A1

公开(公告)日：2021-12-09

申请号：US17285782

申请日：2019-10-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Kunihiro FUKUSHIMA ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO

IPC: H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02

Abstract: A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator, forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator, cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator, and processing the opening to have a cylindrical shape or an inverted cone shape.

公开(公告)号：US20150008321A1

公开(公告)日：2015-01-08

申请号：US14305173

申请日：2014-06-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daisuke OHGARANE ,  Koji DAIRIKI ,  Masahiro TAKAHASHI ,  Shunichi ITO ,  Erika TAKAHASHI

IPC: G01N23/205 ,  H01J37/06 ,  G01N23/20

CPC classification number: G01N23/2055 ,  G01N23/20058 ,  G01N2223/61 ,  H01J37/06 ,  H01J2237/2065 ,  H01J2237/2805

Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.

Abstract translation: 提供一种包括电子枪的透射电子衍射测量装置; 电子枪下的第一光学系统; 第一光学系统下的样品室; 样品室下方的第二光学系统; 第二光学系统下的观察室; 通过从观察室中的电子接收能量而发光的区域; 以及面向该地区的相机。

公开(公告)号：US20220271167A1

公开(公告)日：2022-08-25

申请号：US17626654

申请日：2020-07-08

Applicant: Semiconductor Energy Laboratory co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Shinya SASAGAWA ,  Naoki OKUNO ,  Masahiro TAKAHASHI ,  Kazuki TANEMARA

IPC: H01L29/786 ,  H01L27/108 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with high reliability is provided. The semiconductor device includes a first oxide; a first conductor, a second conductor, and a first insulator over the first oxide; and a third conductor over the first insulator. The first conductor includes a first crystal. The second conductor includes a crystal having the same crystal structure as the first crystal. The first crystal has (111) orientation with respect to a surface of the first oxide. The first oxide includes a second crystal. The second crystal has c-axis alignment with respect to a surface where the first oxide is formed. The lattice mismatch degree of the first crystal with respect to the second crystal is lower than or equal to 8 percent.

公开(公告)号：US20220157986A1

公开(公告)日：2022-05-19

申请号：US17436136

申请日：2020-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L27/108

Abstract: A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

公开(公告)号：US20220157817A1

公开(公告)日：2022-05-19

申请号：US17439500

申请日：2020-03-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with less variations in transistor characteristics is provided. A first insulator, first and second oxide films, a first conductive film, a first insulating film, and a second conductive film are deposited and processed to form a first and second oxides, a first conductive layer, a first insulating layer, and a second conductive layer. In the process, a layer is formed to cover the first and second oxides, the first conductive layer, the first insulating layer, and the second conductive layer. The second conductive layer and the layer are removed. A second insulating layer in contact with side surfaces of the first and second oxides, the first conductive layer, and the first insulating layer is formed, and a second insulator is formed thereover. An opening reaching the second oxide is formed in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator.

公开(公告)号：US20250081537A1

公开(公告)日：2025-03-06

申请号：US18950834

申请日：2024-11-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Katsuaki TOCHIBAYASHI ,  Tsutomu MURAKAWA ,  Erika TAKAHASHI

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H10B12/00

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.