公开(公告)号：US20140099558A1

公开(公告)日：2014-04-10

申请号：US14046104

申请日：2013-10-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toru ITAKURA ,  Kyosuke ITO ,  Jun ISHIKAWA ,  Rie YOKOI

IPC: H01M4/587 ,  H01M10/0525 ,  H01M10/0569

CPC classification number: H01M10/0569 ,  H01G11/06 ,  H01G11/32 ,  H01G11/50 ,  H01G11/60 ,  H01G11/62 ,  H01G11/84 ,  H01M2/162 ,  H01M2/1653 ,  H01M4/0404 ,  H01M4/043 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/136 ,  H01M4/1397 ,  H01M4/5825 ,  H01M4/587 ,  H01M4/621 ,  H01M4/623 ,  H01M4/625 ,  H01M4/661 ,  H01M10/0525 ,  H01M10/0568 ,  H01M10/0585 ,  H01M2004/021 ,  H01M2004/027 ,  H01M2004/028 ,  H01M2220/20 ,  H01M2220/30 ,  H01M2300/0034 ,  H01M2300/0045 ,  Y02E60/122 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and an electrolyte solution. In the negative electrode active material layer, the content percentage of a carbon material with an R value of 1.1 or more is less than 2 wt %. The R value refers to a ratio of a peak intensity I1360 to a peak intensity I1580 (I1360/I1580). The peak intensity I1360 and the peak intensity I1580 are observed by Raman spectrometry at a Raman shift of 1360 cm−1 and a Raman shift of 1580 cm−1, respectively. The electrolyte solution contains a lithium ion and an ionic liquid composed of an organic cation and an anion.

Abstract translation: 提供了具有降低的初始不可逆容量的蓄电装置。 蓄电装置具备包括正极集电体和正极活性物质层的正极，负极集电体和负极活性物质层的负极以及电解液。 在负极活性物质层中，R值为1.1以上的碳材料的含有率小于2重量％。 R值是指峰强度I1360与峰值强度I1580（I1360 / I1580）的比。 通过拉曼光谱测定，在1360cm -1的拉曼位移和1580cm -1的拉曼位移分别观察峰强度I1360和峰强度I1580。 电解质溶液含有锂离子和由有机阳离子和阴离子组成的离子液体。

公开(公告)号：US20140099529A1

公开(公告)日：2014-04-10

申请号：US14042855

申请日：2013-10-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun ISHIKAWA ,  Kyosuke ITO ,  Rie YOKOI

IPC: H01G9/035 ,  H01G11/62 ,  H01M2/24

CPC classification number: H01G9/035 ,  H01G11/62 ,  H01G11/70 ,  H01G11/82 ,  H01M2/0285 ,  H01M2/24 ,  H01M4/661 ,  H01M10/0427 ,  H01M10/0431 ,  H01M10/052 ,  H01M10/058 ,  H01M10/0585 ,  H01M10/0587 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with a higher degree of safety is provided. Further, a power storage device with improved cycle life is provided. In the power storage device, an ionic liquid as a solvent of an electrolyte solution, and an exterior body is covered with a conductive component so as to prevent direct contact between a positive electrode current collector and the exterior body. This suppresses elution of the positive electrode current collector due to contact between different kinds of metals and accordingly prevents a phenomenon in which the eluted metal of the positive electrode current collector is deposited on a negative electrode and the deposited metal comes in contact with a positive electrode. Thus, an internal short-circuit caused by the contact can be prevented.

Abstract translation: 提供了一种具有较高安全性的蓄电装置。 此外，提供了具有改善的循环寿命的蓄电装置。 在蓄电装置中，作为电解质溶液的溶剂的离子液体和外部主体被导电性部件覆盖，以防止正极集电体与外部体之间的直接接触。 这抑制了由于不同种类的金属之间的接触导致的正极集电体的溶出，因此防止了正极集电体的洗脱金属沉积在负极上并且沉积的金属与正极接触的现象 。 因此，可以防止由接触引起的内部短路。

公开(公告)号：US20130334611A1

公开(公告)日：2013-12-19

申请号：US13961197

申请日：2013-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu TAKAHASHI ,  Daiki YAMADA ,  Kyosuke ITO ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN

IPC: H01L23/66

CPC classification number: H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.