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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240429319A1

    公开(公告)日：2024-12-26

    申请号：US18817534

    申请日：2024-08-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

    IONIC LIQUID, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE
    2.
    发明申请
    IONIC LIQUID, NONAQUEOUS ELECTROLYTE, AND POWER STORAGE DEVICE 审中-公开

    公开(公告)号：US20160141719A1

    公开(公告)日：2016-05-19

    申请号：US15008487

    申请日：2016-01-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Toru ITAKURA ,  Kyosuke ITO ,  Rie YOKOI (Former MATSUBARA) ,  Jun ISHIKAWA

    IPC: H01M10/0569 ,  H01M10/0568 ,  H01M10/052

    CPC classification number: H01M10/0569 ,  H01M10/052 ,  H01M10/0568 ,  H01M2300/0045 ,  Y02E60/122

    Abstract: A nonaqueous electrolyte of the present invention includes an ionic liquid including a first alicyclic quaternary ammonium cation having one or more substituents, a second alicyclic quaternary ammonium cation having an alicyclic skeleton that is the same as an alicyclic skeleton of the first alicyclic quaternary ammonium cation, and a counter anion to the first alicyclic quaternary ammonium cation and the second alicyclic quaternary ammonium cation and an alkali metal salt. In the second alicyclic quaternary ammonium cation, one of substituents bonded to a nitrogen atom in the alicyclic skeleton is a substituent including a halogen element. In the ionic liquid, the amount of a salt including the second alicyclic quaternary ammonium cation is less than or equal to 1 wt % per unit weight of the ionic liquid, or is less than or equal to 0.8 wt % per unit weight of the nonaqueous electrolyte.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210399134A1

    公开(公告)日：2021-12-23

    申请号：US17285401

    申请日：2019-10-17

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

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