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公开(公告)号：US11326274B2
公开(公告)日：2022-05-10
申请号：US16910542
申请日：2020-06-24
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
Abstract: Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room temperature, and the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion at a single crystal growth temperature.
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公开(公告)号：US11261541B2
公开(公告)日：2022-03-01
申请号：US16532794
申请日：2019-08-06
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
Abstract: A shielding member placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, including a crystal growth container including the loading portion which accommodates a SiC source in an inner bottom portion; a crystal installation portion facing the loading portion, and a heating unit configured to heat the crystal growth container. The device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the loading portion. The shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container. When the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates is 0.5 or more.
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公开(公告)号：US11041257B2
公开(公告)日：2021-06-22
申请号：US16391566
申请日：2019-04-23
Applicant: SHOWA DENKO K.K.
Inventor： Yoshiteru Hosaka , Yohei Fujikawa
Abstract: A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.
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公开(公告)号：US11814749B2
公开(公告)日：2023-11-14
申请号：US16559863
申请日：2019-09-04
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
CPC classification number: C30B35/002 , C30B23/025 , C30B23/066 , C30B35/007
Abstract: The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.
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公开(公告)号：US11643749B2
公开(公告)日：2023-05-09
申请号：US16391556
申请日：2019-04-23
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
CPC classification number: C30B23/066 , C23C14/0635 , C23C14/243 , C30B29/36
Abstract: The present invention provides a crucible and a SiC single crystal growth apparatus capable of improving the efficiency of using source materials. The crucible includes a lid and a container. The container includes a bottom facing the lid. The bottom includes a recess which is recessed towards the lid.
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Patent Agency Ranking
公开(公告)号：US11618969B2
公开(公告)日：2023-04-04
申请号：US16349418
申请日：2017-11-14
Applicant: SHOWA DENKO K.K. , DENSO CORPORATION
Inventor： Yohei Fujikawa , Hideyuki Uehigashi
IPC: C30B29/36 , C01B32/956 , C30B23/02
Abstract: A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.
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公开(公告)号：US11459669B2
公开(公告)日：2022-10-04
申请号：US16223185
申请日：2018-12-18
Applicant: SHOWA DENKO K.K.
Inventor： Rimpei Kindaichi , Yohei Fujikawa , Yoshishige Okuno
Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
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公开(公告)号：US11111599B2
公开(公告)日：2021-09-07
申请号：US16559875
申请日：2019-09-04
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
Abstract: The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.
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公开(公告)号：US10907272B2
公开(公告)日：2021-02-02
申请号：US16221671
申请日：2018-12-17
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
Abstract: The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and in the single crystal growing step, and in which the concentration of the nitrogens gas in the crystal growing furnace in the temperature lowering step is higher than the concentration of the nitrogen gas in the temperature raising step and the single crystal growing step.
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公开(公告)号：US11946156B2
公开(公告)日：2024-04-02
申请号：US16734966
申请日：2020-01-06
Applicant: SHOWA DENKO K.K.
Inventor： Yohei Fujikawa
CPC classification number: C30B23/066 , C23C14/0635 , C23C14/243 , C30B29/36 , C30B35/002
Abstract: According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.
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