公开(公告)号：US09390002B1

公开(公告)日：2016-07-12

申请号：US14065258

申请日：2013-10-28

Applicant: SK Hynix Inc.

Inventor： Hsiao-Heng Lee ,  Lingqi Zeng ,  Frederick K. H. Lee ,  Jason Bellorado

IPC: G06F12/00 ,  G06F12/02 ,  G11C16/34

CPC classification number: G06F12/0207 ,  G06F11/1012 ,  G06F11/34 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3431 ,  G11C2211/5641

Abstract: Information associated with a read to solid state storage is received, including a read number and a read value. The read value is written to a location in a cell and bin map, wherein (1) the location in the cell and bin map corresponds to the read number and (2) the cell and bin map tracks, for each cell in a group of cells, which bin out of a plurality of bins a given cell falls into.

Abstract translation: 接收与读取到固态存储相关联的信息，包括读取数字和读取值。 将读取值写入单元格和bin映射中的位置，其中（1）单元格和bin图中的位置对应于读取的数字，以及（2）单元格和bin地图轨道，对于一组 在给定单元落入多个箱中的单元格。

公开(公告)号：US10318414B2

公开(公告)日：2019-06-11

申请号：US14927135

申请日：2015-10-29

Applicant: SK hynix Inc.

Inventor： Jason Bellorado ,  Xiangyu Tang

IPC: G06F9/45 ,  G06F12/08 ,  G06F12/0808 ,  G06F12/0815 ,  G06F12/02 ,  G06F12/12

Abstract: A memory system include a memory device including a plurality of blocks, each of the blocks having a plurality of pages, and a controller suitable for determining valid pages from among the plurality of pages based on data temperature, and performing a garbage collection process based on a number of valid pages and data temperature of the valid pages.

公开(公告)号：US09514845B1

公开(公告)日：2016-12-06

申请号：US14534638

申请日：2014-11-06

Applicant: SK Hynix Inc.

Inventor： Zheng Wu ,  Jason Bellorado ,  Arunkumar Subramanian

IPC: G06F11/00 ,  G11C29/42 ,  G11C29/44 ,  G06F11/10

CPC classification number: G11C29/42 ,  G06F11/1004 ,  G06F11/1048 ,  G11C29/44

Abstract: A group of one or more solid state storage cells is programmed. A predetermined amount of time after the group of solid state storage cells is programmed, the group of solid state storage cells is read to obtain read data. Error correction decoding is performed on the read data and the group of solid state storage cells is assessed for wear related degradation based at least in part on the error correction decoding.

Abstract translation: 一组一个或多个固态存储单元被编程。 在组态固态存储单元被编程之后的预定时间量内，读取固态存储单元组以获得读取数据。 对读取的数据执行纠错解码，并且至少部分地基于纠错解码来评估固态存储单元组的磨损相关的退化。

公开(公告)号：US09236147B1

公开(公告)日：2016-01-12

申请号：US14493216

申请日：2014-09-22

Applicant: SK Hynix Inc.

Inventor： Jason Bellorado ,  Ameen Aslam ,  Zheng Wu

IPC: G06F17/50 ,  G11C29/50 ,  G06F11/10

CPC classification number: G11C29/50004 ,  G06F11/1048 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/4402

Abstract: An instruction to read at least a portion of a superblock is received where the superblock is stored on at least a first solid state storage die. It is determined if adjusted threshold information, associated with the first solid state storage die and the superblock, is stored. If it is determined that adjusted threshold information is not stored, then an adjusted threshold is determined and a read is performed on the first solid state storage die using the determined adjusted threshold. If it is determined that adjusted threshold information is stored, then a read is performed on the first solid state storage die using the stored adjusted threshold information.

Abstract translation: 接收读取超块的至少一部分的指令，其中超块被存储在至少第一固态存储芯片上。 确定与第一固态存储管芯和超级块相关联的调整的阈值信息是否被存储。 如果确定未存储调整后的阈值信息，则确定调整后的阈值，并使用所确定的调整后的阈值对第一固态存储管芯进行读取。 如果确定存储了调整后的阈值信息，则使用存储的调整后的阈值信息对第一固态存储管芯执行读取。