Abstract:
Devices and methods for detecting and correcting duty cycles are described. An input switching unit is configured to perform at least one of an operation of outputting differential input signals as a first combination of first and second output signals and an operation of outputting the differential input signals as a second combination of the first and second output signals, according to one of a plurality of control signals. A comparator is configured to receive the first output signal through a first input terminal thereof, to receive the second output signal through a second input terminal thereof, to generate duty detection signals by comparing the signal of the first input terminal and the signal of the second input terminal according to at least another one of the plurality of control signals, and to adjust an offset of at least one of the first input terminal and the second input terminal.
Abstract:
A semiconductor device includes a plurality of stacked dies electrically connected with each other. Each of the stacked dies includes a data path, a strobe path, a stack information generation circuit, and a delay control circuit. The data path transmits a data signal. The strobe path transmits a data strobe signal. The stack information generation circuit generates stack information representing a number of the dies. The delay control circuit controls a delay time of at least one of the data path and the strobe path to based on the stack information.
Abstract:
An input/output circuit includes a data buffer group configured to buffer data received through data lines, a data strobe buffer configured to buffer a data strobe signal to output a buffered data strobe clock, a digitally controlled delay line configured to output delay data by controlling skew of the buffered data according to a delay code, a data strobe clock output circuit configured to generate a delay data strobe clock in response to the buffered data strobe clock, a sampler configured to sample the delay data according to the delay data strobe clock to output sampled data, and a de-skew circuit configured to update the delay code according to the sampled data.
Abstract:
An equalization circuit may include a buffer configured to sense an input signal according to a reference voltage. The equalization circuit may include a reference voltage generator configured to generate the reference voltage. The reference voltage may be changed in conformity with noise of the input signal.
Abstract:
An equalization circuit may include a buffer configured to sense an input signal according to a reference voltage. The equalization circuit may include a reference voltage generator configured to generate the reference voltage. The reference voltage may be changed in conformity with noise of the input signal.
Abstract:
An equalization circuit may include a buffer configured to sense an input signal according to a reference voltage. The equalization circuit may include a reference voltage generator configured to generate the reference voltage. The reference voltage may be changed in conformity with noise of the input signal.
Abstract:
The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.
Abstract:
A semiconductor apparatus includes a data input buffer configured to generate write data by receiving data that is input through a data input/output unit during a write operation section and configured to generate an output level detection signal by detecting a voltage level of the data I/O unit during a read operation section.
Abstract:
An impedance calibration circuit may include: a first driver having an impedance calibrated according to a first impedance control code, and configured to drive an output terminal according to first data; a second driver having an impedance calibrated according to a second impedance control code, and configured to drive the output terminal according to second data; and an impedance calibration circuit configured to calibrate the first impedance control code to a first target value set to a resistance value of an external resistor, and calibrate the second impedance control code to a second target value different from the resistance value of the external resistor.
Abstract:
The present disclosure relates to a data out buffer and a memory device having the same. The data out buffer includes a pull-up main driver, coupled between a power supply terminal and an output terminal, configured to output data of a high level; and a pull-down main driver, coupled between the output terminal and a ground terminal, configured to output data of a low level, wherein the pull-up main driver comprises a main pull-up transistor of a first type; and a plurality of first trim transistors, each of a second type.