公开(公告)号：US09472610B2

公开(公告)日：2016-10-18

申请号：US14733559

申请日：2015-06-08

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Katherine Crook ,  Stephen R Burgess

IPC: H01L21/70 ,  H01L49/02 ,  H01L21/02 ,  C23C14/10 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L28/40 ,  C23C14/10 ,  C23C16/401 ,  C23C16/45523 ,  C23C28/04 ,  H01L21/02118 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02274 ,  H01L23/3192 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.

Abstract translation: 一种其上具有电介质膜的衬底，其中：所述电介质膜包括至少四层电介质材料层叠体; 堆叠层包括经受压应力的压缩层和承受拉应力的拉伸层; 并且存在至少两个间隔开的拉伸层，每个拉伸层各自邻近一个或多个压缩层。

公开(公告)号：US09048066B2

公开(公告)日：2015-06-02

申请号：US13934531

申请日：2013-07-03

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Stephen R Burgess ,  Alex Theodosiou

IPC: H01J37/20 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/321 ,  H01J37/32862 ,  H01J2237/334

Abstract: A method is for etching successive substrates on a platen in an inductively coupled plasma chamber in which the etching process results in carbonaceous deposits in the chamber. The method includes (a) interrupting the etching processing of substrates, (b) running an oxygen or oxygen containing plasma within the chamber and removing gaseous by-products, and (c) resuming the etch processing of substrates. The method is characterized in that it further includes the step of running an argon plasma in the chamber after step (b) with the platen biased.

Abstract translation: 一种方法是用于在电感耦合等离子体室中的压板上蚀刻连续的衬底，其中蚀刻工艺导致腔室中的碳质沉积物。 该方法包括（a）中断衬底的蚀刻处理，（b）在室内运行含氧或含氧等离子体并除去气体副产物，以及（c）恢复衬底的蚀刻处理。 该方法的特征在于它还包括在步骤（b）之后在压板偏压的情况下在室中运行氩等离子体的步骤。