公开(公告)号：US20230343831A1

公开(公告)日：2023-10-26

申请号：US18309584

申请日：2023-04-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Anna BASSI ,  Gabriele BELLOCCHI

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US20230299148A1

公开(公告)日：2023-09-21

申请号：US18183866

申请日：2023-03-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Fabrizio ROCCAFORTE ,  Gabriele BELLOCCHI ,  Marilena VIVONA

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H01L29/872 ,  H01L29/45

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7802 ,  H01L29/872 ,  H01L29/66143 ,  H01L29/45

Abstract: A method for manufacturing an electronic device includes forming, at a front side of a solid body of 4H-SiC having a first electrical conductivity, at least one implanted region having a second electrical conductivity opposite to the first electrical conductivity; forming, on the front side, a 3C-SiC layer; and forming, in the 3C-SiC layer, an ohmic contact region which extends through the entire thickness of the 3C-SiC layer, up to reaching the implanted region. A silicon layer may be present on the 3C-SiC layer; in this case, the ohmic contact also extends through the silicon layer.

公开(公告)号：US20220246771A1

公开(公告)日：2022-08-04

申请号：US17592322

申请日：2022-02-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Edoardo ZANETTI ,  Mario Giuseppe SAGGIO

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

Abstract: A vertical conduction electronic device is formed by a body of wide-bandgap semiconductor material having a first conductivity type and a surface, which defines a first direction and a second direction. The body has a drift region. The electronic device includes a plurality of superficial implanted regions having a second conductivity type, which extend in the drift region from the surface and delimit between them, in the drift region, at least one superficial portion facing the surface. At least one deep implanted region has the second conductivity type, and extends in the drift region, at a distance from the surface of the body. A metal region extends on the surface of the body, in Schottky contact with the superficial portion of the drift region.

公开(公告)号：US20220246770A1

公开(公告)日：2022-08-04

申请号：US17584185

申请日：2022-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Marco SANTORO

IPC: H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.