公开(公告)号：US20140032188A1

公开(公告)日：2014-01-30

申请号：US13949884

申请日：2013-07-24

Applicant: STMicroelectronics SA

Inventor： Jean-Robert Manouvrier

IPC: G06F17/10

CPC classification number: G06F17/10 ,  G06F17/5036

Abstract: The electric behavior of a reverse-biased PN junction diode is modeled by measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, the voltage V varying within a range of values including the value of diode breakdown voltage. A representation of a function ln  ( I - I s ) according to voltage V is established from the measured values of current I and of voltage V, IS being the saturation current of the diode. A linear function representative of a substantially linear portion of the function, characterized by voltages V greater than breakdown voltage VBK in terms of absolute value, is determined. An avalanche multiplication factor MM is then calculated by MM = 1 +  ( - slbv · V + bv bv ) , with parameter slbv equal to the ordinate at the origin of the linear function, and parameter slbv/bv equal to the slope of the linear function.

Abstract translation: 反向偏置PN结二极管的电气行为通过测量二极管上存在的电压V的值和通过该二极管的相应电流I的值来建模，电压V在包括的值的范围内变化 二极管击穿电压。 根据电压I和电压V的测量值，IS是二极管的饱和电流建立函数ln（I-I s）的表示。 确定表示功能的基本线性部分的线性函数，其特征在于以绝对值计的大于击穿电压VBK的电压V。 然后通过MM = 1 +（ - slbv·V + bv bv）计算雪崩倍增因子MM，参数slbv等于线性函数原点的纵坐标，参数slbv / bv等于 线性函数。

公开(公告)号：US09971173B2

公开(公告)日：2018-05-15

申请号：US15251236

申请日：2016-08-30

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/035 ,  G02F1/295 ,  G02B6/12 ,  G02F1/025 ,  G02F1/01 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/0123 ,  G02F1/225 ,  G02F1/2255

Abstract: A semiconductor electro-optical phase shifter may include a substrate, an optical waveguide segment (12) formed on the substrate, and first and second zones of opposite conductivity types configured to form a first bipolar junction perpendicular to the substrate. The phase shifter may also include a dynamic control structure configured to reverse bias the first junction and a static control structure configured to direct a quiescent current in the second zone, parallel to the first junction.

公开(公告)号：US20170288781A1

公开(公告)日：2017-10-05

申请号：US15083616

申请日：2016-03-29

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Jean-Francois Carpentier ,  Patrick Lemaitre ,  Jean-Robert Manouvrier ,  Denis Pache ,  Stephane Le Tual

IPC: H04B10/516 ,  H04L25/49

CPC classification number: H04B10/541 ,  G02F1/0121 ,  G02F1/2257 ,  H04B10/505 ,  H04L25/4917

Abstract: An optical modulator includes an optical waveguide including at least a first PN junction phase shifter and a second PN junction phase shifter. A driver circuit drives operation of the first and second PN junction phase shifters in response to a pulse amplitude modulated (PAM) analog signal having 2n levels. The PAM analog signal is generated by a digital to analog converter that receives an n-bit input signal. In an implementation, the optical waveguide and PN junction phase shifters are formed on a first integrated circuit chip and the driver circuit is formed on a second integrated circuit chip that is stacked on and electrically connected to the first integrated circuit chip.

公开(公告)号：US09507181B2

公开(公告)日：2016-11-29

申请号：US15198114

申请日：2016-06-30

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/025 ,  G02F1/225 ,  G02B6/12 ,  H04B10/54 ,  H04B10/548

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02F1/2257 ,  H04B10/548

Abstract: A semiconductor electro-optical phase shifter may include an optical action zone configured to be inserted in an optical waveguide, and a bipolar transistor structure configured so that, in operation, collector current of the bipolar transistor structure crosses the optical action zone perpendicular to the axis of the optical waveguide.

Abstract translation: 半导体电光移相器可以包括被配置为插入在光波导中的光学作用区域和双极晶体管结构，其被配置为使得在操作中双极晶体管结构的集电极电流与垂直于轴线的光学作用区域相交 的光波导。

公开(公告)号：US09423580B2

公开(公告)日：2016-08-23

申请号：US14637559

申请日：2015-03-04

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Robert Manouvrier ,  Estelle Batail

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G02B6/12 ,  G02B6/10 ,  G02B6/42 ,  G02B6/13 ,  H01L21/768 ,  H01L49/02 ,  G02F1/025 ,  H01L27/02

CPC classification number: G02B6/4275 ,  G02B6/13 ,  G02F1/025 ,  G02F2202/22 ,  H01L21/768 ,  H01L27/0248 ,  H01L28/40

Abstract: An ESD protection device for an electro-optical device may include an optical waveguide segment being in semiconductor material and including a central zone of a first conductivity type, and first and second wings of a second conductivity type different from the first conductivity type and being integral with the central zone. The ESD protection device may include a first conduction terminal on the first wing for defining a first protection terminal, a second conduction terminal on the second wing for defining a second protection terminal, and a resistive contact structure of the first conductivity type having a transverse arm integral with the central zone, and an end in ohmic contact with the first conduction terminal, the resistive contact structure being electrically insulated from the first wing.

Abstract translation: 用于电光装置的ESD保护装置可以包括半导体材料中的光波导段，并且包括第一导电类型的中心区，以及不同于第一导电类型的第二导电类型的第一和第二翼， 与中央区。 ESD保护装置可以包括在第一翼上的用于限定第一保护端子的第一导电端子，用于限定第二保护端子的第二机翼上的第二导电端子，以及具有横臂的第一导电类型的电阻接触结构 与中心区域成一体，并且与第一导电端子欧姆接触的端部，电阻接触结构与第一机翼电绝缘。

公开(公告)号：US09405137B2

公开(公告)日：2016-08-02

申请号：US14283340

申请日：2014-05-21

Applicant: STMICROELECTRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/025 ,  G02F1/225 ,  G02B6/12

CPC classification number: G02F1/025 ,  G02B6/12 ,  G02F1/2257 ,  H04B10/548

Abstract: A semiconductor electro-optical phase shifter may include an optical action zone configured to be inserted in an optical waveguide, and a bipolar transistor structure configured so that, in operation, collector current of the bipolar transistor structure crosses the optical action zone perpendicular to the axis of the optical waveguide.

公开(公告)号：US09268743B2

公开(公告)日：2016-02-23

申请号：US13949884

申请日：2013-07-24

Applicant: STMicroelectronics SA

Inventor： Jean-Robert Manouvrier

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/10 ,  G06F17/5036

Abstract: The electric behavior of a reverse-biased PN junction diode is modeled by measuring the value of voltage V present across the diode and the value of the corresponding current I running through this diode, the voltage V varying within a range of values including the value of diode breakdown voltage. A representation of a function ln ⁡ ( I - I s ) according to voltage V is established from the measured values of current I and of voltage V, IS being the saturation current of the diode. A linear function representative of a substantially linear portion of the function, characterized by voltages V greater than breakdown voltage VBK in terms of absolute value, is determined. An avalanche multiplication factor MM is then calculated by MM = 1 + ⅇ ( - slbv · V + bv bv ) , with parameter slbv equal to the ordinate at the origin of the linear function, and parameter slbv/bv equal to the slope of the linear function.

Abstract translation: 反向偏置PN结二极管的电气行为通过测量二极管上存在的电压V的值和通过该二极管的相应电流I的值来建模，电压V在包括的值的范围内变化 二极管击穿电压。 根据电压I和电压V的测量值建立函数ln⁡（I-I s）的表示，IS是二极管的饱和电流。 确定表示功能的基本线性部分的线性函数，其特征在于以绝对值计的大于击穿电压VBK的电压V。 然后通过MM = 1 +ⅇ（ - slbv·V + bv bv）计算雪崩倍增因子MM，参数slbv等于线性函数原点的纵坐标，参数slbv / bv等于 线性函数。

公开(公告)号：US11215851B2

公开(公告)日：2022-01-04

申请号：US16356915

申请日：2019-03-18

Applicant: STMicroelectronics SA

Inventor： Jean-Robert Manouvrier

IPC: G02F1/01 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  H04B10/50 ,  G02F1/21 ,  G02F1/225

Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

公开(公告)号：US09791346B1

公开(公告)日：2017-10-17

申请号：US15133614

申请日：2016-04-20

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Jean-Francois Carpentier ,  Patrick Lemaitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01B9/00 ,  G01M11/02 ,  G02B6/28 ,  G02B6/34 ,  G02B6/12

CPC classification number: G01M11/02 ,  G01R31/2656 ,  G01R31/27 ,  G01R31/2884 ,  G01R31/303 ,  G01R31/311 ,  G01R31/31728 ,  G01R35/00 ,  G02B6/00 ,  G02B6/12004 ,  G02B6/2808 ,  G02B6/34

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US09645469B2

公开(公告)日：2017-05-09

申请号：US14836011

申请日：2015-08-26

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Patrick Lemaitre ,  Jean-Francois Carpentier ,  Charles Baudot ,  Jean-Robert Manouvrier

IPC: G02F1/225 ,  G02F1/025 ,  G02F1/21

CPC classification number: G02F1/225 ,  G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15

Abstract: An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.