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    Electronic IC device comprising integrated optical and electronic circuit component and fabrication method
    13.
    发明授权
    Electronic IC device comprising integrated optical and electronic circuit component and fabrication method 有权

    公开(公告)号：US11581249B2

    公开(公告)日：2023-02-14

    申请号：US17015634

    申请日：2020-09-09

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Jean-Pierre Carrere ,  Francois Guyader

    IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L31/02

    Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

    IMAGE SENSOR CHIP
    14.
    发明申请
    IMAGE SENSOR CHIP 审中-公开

    公开(公告)号：US20180145100A1

    公开(公告)日：2018-05-24

    申请号：US15600962

    申请日：2017-05-22

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Laurent Gay ,  Francois Guyader

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687

    Abstract: An image sensor chip includes a semiconductor layer intended to receive illumination on a back face and comprising a matrix of pixels on a front face. An interconnection structure is arranged on the front face and a carrier is attached to the interconnection structure with a first face of the carrier facing the front face. An annular trench, arranged on a perimeter of the image sensor chip, extends from a second face of the carrier through an entire thickness of the carrier and into the interconnection structure. A via opening, arranged within the annual trench, extends from the second face of the carrier through the entire thickness of the carrier to reach a metal portion of the interconnection structure. The via opening an annual trench are lined with an insulating layer. The via opening include a metal conductor making an electrical connection to the metal portion.

    BACK-ILLUMINATED INTEGRATED IMAGING DEVICE WITH SIMPLIFIED INTERCONNECT ROUTING
    16.
    发明申请
    BACK-ILLUMINATED INTEGRATED IMAGING DEVICE WITH SIMPLIFIED INTERCONNECT ROUTING 有权
    具有简化的互连路由的后置照明集成成像装置

    公开(公告)号：US20160099278A1

    公开(公告)日：2016-04-07

    申请号：US14847391

    申请日：2015-09-08

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Guyader ,  Jean-Pierre Oddou ,  Stephane Allegret-Maret ,  Mickael Gros-Jean

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/1203 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464

    Abstract: A back-illuminated integrated imaging device is formed from a semiconductor substrate including a zone of pixels bounded by capacitive deep trench isolations. A peripheral zone is located outside the zone of pixels. A continuous electrically conductive layer forms, in the zone of pixels, an electrode in a trench for each capacitive deep trench isolation, and forms, in the peripheral zone, a redistribution layer for electrically coupling the electrode to a biasing contact pad. The electrode is located in the trench between a trench dielectric and at least one material for filling the trench.

    Abstract translation: 背照式集成成像装置由包括由电容深沟槽隔离限制的像素区域的半导体衬底形成。 外围区域位于像素区域之外。 连续导电层在像素区域中形成用于每个电容深沟槽隔离的沟槽中的电极，并且在周边区域中形成用于将电极电耦合到偏置接触焊盘的再分布层。 电极位于沟槽电介质和用于填充沟槽的至少一种材料之间的沟槽中。

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