Cantilever piezoelectric transducer

    公开(公告)号:US11183953B2

    公开(公告)日:2021-11-23

    申请号:US16152076

    申请日:2018-10-04

    Abstract: A piezoelectric transducer includes an anchorage and a beam of semiconductor material extending in cantilever fashion from the anchorage in a main direction parallel to a first axis and having a face parallel to a first plane defined by the first axis and by a second axis perpendicular to the first axis. A piezoelectric layer is on the face of the beam. A cross-section of the beam is perpendicular to the first axis and is asymmetrical and shaped so the beam deformations out of the first plane in response to forces applied to the anchorage and oriented parallel to the first axis.

    CANTILEVER PIEZOELECTRIC TRANSDUCER
    12.
    发明申请

    公开(公告)号:US20190044458A1

    公开(公告)日:2019-02-07

    申请号:US16152076

    申请日:2018-10-04

    Abstract: A piezoelectric transducer includes an anchorage and a beam of semiconductor material extending in cantilever fashion from the anchorage in a main direction parallel to a first axis and having a face parallel to a first plane defined by the first axis and by a second axis perpendicular to the first axis. A piezoelectric layer is on the face of the beam. A cross-section of the beam is perpendicular to the first axis and is asymmetrical and shaped so the beam deformations out of the first plane in response to forces applied to the anchorage and oriented parallel to the first axis.

    Cantilever piezoelectric transducer

    公开(公告)号:US10135365B2

    公开(公告)日:2018-11-20

    申请号:US14980762

    申请日:2015-12-28

    Abstract: A piezoelectric transducer includes: an anchorage; a beam of semiconductor material, extending in cantilever fashion from the anchorage in a main direction parallel to a first axis and having a face parallel to a first plane defined by the first axis and by a second axis perpendicular to the first axis; and a piezoelectric layer on the face of the beam. A cross-section of the beam perpendicular to the first axis is asymmetrical and is shaped so that the beam presents deformations out of the first plane in response to forces applied to the anchorage and oriented according to the first axis.

    INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY
    16.
    发明申请
    INTEGRATED TRIAXIAL MAGNETOMETER OF SEMICONDUCTOR MATERIAL MANUFACTURED IN MEMS TECHNOLOGY 有权
    MEMS技术制造的半导体材料的集成三光子计

    公开(公告)号:US20140077798A1

    公开(公告)日:2014-03-20

    申请号:US13905006

    申请日:2013-05-29

    CPC classification number: G01R33/0286 G01R33/0005 G01R33/028 G01R33/038

    Abstract: Two suspended masses are configured so as to be flowed by respective currents flowing in the magnetometer plane in mutually transversal directions and are capacitively coupled to lower electrodes. Mobile sensing electrodes are carried by the first suspended mass and are capacitively coupled to respective fixed sensing electrodes. The first suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a first horizontal direction. The second suspended mass is configured so as to be mobile in a direction transversal to the plane in presence of a magnetic field having a component in a second horizontal direction, and the first suspended mass is configured so as to be mobile in a direction parallel to the plane and transversal to the current flowing in the first suspended mass in presence of a magnetic field having a component in a vertical direction.

    Abstract translation: 两个悬挂质量被配置为使得在相互横向上在磁力计平面中流动的相应电流流动,并且电容耦合到下电极。 移动感测电极由第一悬浮质量携带并且电容耦合到相应的固定感测电极。 第一悬挂质量被配置为在存在具有在第一水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的。 第二悬挂质量被配置为在存在具有在第二水平方向上的分量的磁场的情况下在横向于平面的方向上是可移动的,并且第一悬挂质量被配置为在平行于 并且在存在具有在垂直方向上的分量的磁场的情况下横向于在第一悬浮质量块中流动的电流。

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