公开(公告)号：US10794772B2

公开(公告)日：2020-10-06

申请号：US15957999

申请日：2018-04-20

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Vaiana ,  Paolo Pesenti ,  Mario Chiricosta ,  Calogero Marco Ippolito ,  Mario Maiore

IPC: G01K3/14 ,  H03H17/02 ,  G01K7/02 ,  H03M3/00

Abstract: A circuit includes a first input terminal, a second input terminal, a third input terminal and an output terminal. A first summation node adds signals at the first and third input terminals. A second summation node subtracts signals at the second and third input terminals. A selector selects between the added signals and subtracted signals in response to a selection signal. The output of the selector is integrated to generate an integrated signal. The integrated signal is compared by a comparator to a threshold, the comparator generating an output signal at the output terminal having a first level and a second level. Feedback of the output signal produces the selection signal causing the selector to select the added signals in response to the first level of the output signal and causing the selector to select the subtracted signals in response to the second level of the output signal.

公开(公告)号：US10317293B2

公开(公告)日：2019-06-11

申请号：US14958786

申请日：2015-12-03

Applicant: STMicroelectronics S.R.L.

Inventor： Michele Vaiana ,  Daniele Casella ,  Giuseppe Bruno

IPC: G01K7/00 ,  G01K7/34 ,  G01K7/01

Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.

公开(公告)号：US20160290875A1

公开(公告)日：2016-10-06

申请号：US14958786

申请日：2015-12-03

Applicant: STMicroelectronics S.R.L.

Inventor： Michele Vaiana ,  Daniele Casella ,  Giuseppe Bruno

IPC: G01K7/34

CPC classification number: G01K7/343 ,  G01K7/01 ,  G01K7/34

Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.

Abstract translation: 集成在半导体材料芯片中的感测元件具有被配置为反向偏置的结型感测二极管，使得其结电容对于局部温度敏感。 读取级耦合到感测元件，用于检测感测二极管的结电容的变化，并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管具有耦合到偏置节点的阴极端子和耦合到读取级的第一输入端的阳极端子。 偏置节点相对于读取级的第一输入接收电压为正，以保持感测二极管反向偏置。

公开(公告)号：US20160076962A1

公开(公告)日：2016-03-17

申请号：US14950832

申请日：2015-11-24

Applicant: STMicroelectronics S.r.l.

Inventor： Lorenzo Baldo ,  Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Paul Georges Marie Rose

IPC: G01L19/00 ,  G01L9/00 ,  G01K7/01

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

公开(公告)号：US11652458B2

公开(公告)日：2023-05-16

申请号：US17372262

申请日：2021-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Michele Vaiana ,  Angelo Recchia

IPC: H03F3/45 ,  G05F3/24 ,  G06G7/186 ,  H03B5/24 ,  H03F3/393

CPC classification number: H03F3/45183 ,  G05F3/245 ,  G06G7/186 ,  H03B5/24 ,  H03F3/393 ,  H03F3/4565 ,  H03F3/45475 ,  H03F3/45654 ,  H03F3/45753 ,  H03F2200/171

Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.

公开(公告)号：US11368165B2

公开(公告)日：2022-06-21

申请号：US17211355

申请日：2021-03-24

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Michele Vaiana

IPC: H03M1/06 ,  H03M3/00

Abstract: A converter circuit includes an analog-to-digital signal conversion path. An input port receives an analog input signal having an offset, and an output port delivers a digital output signal quantized over M levels. The digital output signal is sensed by a digital-to-analog feedback path, which includes a digital-to-analog converter applying to the input port an analog feedback signal produced as a function of an M-bit digital word under control of a two-state signal having alternating first and second states. M-bit digital word generation circuitry coupled to the digital-to-analog converter and sensitive to the two-state signal produces, alternately, during the first states, a first M-bit digital word, which is a function of the digital output signal quantized over M levels, and, during the second states, a second M-bit digital word, which is a function a correction value of the offset in the analog input signal.

公开(公告)号：US20210336593A1

公开(公告)日：2021-10-28

申请号：US17372262

申请日：2021-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Michele Vaiana ,  Angelo Recchia

IPC: H03F3/45 ,  G05F3/24 ,  H03F3/393 ,  G06G7/186 ,  H03B5/24

Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.

公开(公告)号：US11095261B2

公开(公告)日：2021-08-17

申请号：US16781493

申请日：2020-02-04

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Michele Vaiana ,  Angelo Recchia

IPC: H03F3/45 ,  G05F3/24 ,  G06G7/186 ,  H03B5/24 ,  H03F3/393

Abstract: An amplification interface includes a drain of a first FET connected to a first node, a drain of a second FET connected to a second node, and sources of the first and second FETs connected to a third node. First and second bias-current generators are connected to the first and second nodes. A third FET is connected between the third node and a reference voltage. A regulation circuit drives the gate of the third FET to regulate the common mode of the voltage at the first node and the voltage at the second node to a desired value. A current generator applies a correction current to the first and/or second node. A differential current integrator has a first and second inputs connected to the second and first nodes. The integrator supplies a voltage representing the integral of the difference between the currents received at the second and first inputs.

公开(公告)号：US20200050305A1

公开(公告)日：2020-02-13

申请号：US16523302

申请日：2019-07-26

Applicant: STMicroelectronics S.r.l.

Inventor： Calogero Marco Ippolito ,  Angelo Recchia ,  Antonio Cicero ,  Pierpaolo Lombardo ,  Michele Vaiana

IPC: G06F3/045 ,  G06F3/041 ,  G09G3/00 ,  G01R31/28

Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.

公开(公告)号：US09518886B2

公开(公告)日：2016-12-13

申请号：US14950832

申请日：2015-11-24

Applicant: STMicroelectronics S.r.l.

Inventor： Lorenzo Baldo ,  Michele Vaiana ,  Mario Chiricosta ,  Mario Maiore ,  Paul Georges Marie Rose

IPC: G01K11/00 ,  G01L19/00 ,  G01K7/01 ,  G01L9/00 ,  G01L9/06

CPC classification number: G01L19/0092 ,  G01K7/01 ,  G01L9/0054 ,  G01L9/065

Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.

Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。