公开(公告)号：US20240341138A1

公开(公告)日：2024-10-10

申请号：US18511349

申请日：2023-11-16

Applicant: Samsung Display Co., LTD.

Inventor： Seung Min LEE ,  Dong Jo KIM ,  Young Ji KIM ,  Hyun KIM ,  Si Joon SONG ,  Je Won YOO

IPC: H10K59/131 ,  H10K59/12 ,  H10K59/80 ,  H10K71/60

CPC classification number: H10K59/131 ,  H10K59/1201 ,  H10K59/871 ,  H10K59/873 ,  H10K71/60

Abstract: A display device includes: a substrate comprising an open portion; a pad portion on the substrate and exposed through the open portion; a fanout line integrally formed with the pad portion; a data line electrically connected to the fanout line; a flexible film under the substrate and comprising a lead electrode inserted into the open portion of the substrate to directly contact the pad portion; and a contact portion covering a lower surface of the lead electrode and a lower surface of the pad portion to electrically connect the lead electrode and the pad portion.

公开(公告)号：US20240074258A1

公开(公告)日：2024-02-29

申请号：US18313093

申请日：2023-05-05

Applicant: Samsung Display Co., LTD.

Inventor： Wan Jung KIM ,  Dong Jo KIM ,  Sun Hwa KIM ,  Young Ji KIM ,  Chang Sik KIM ,  Kyung Ah NAM ,  Hyo Young MUN ,  Yong Seung PARK ,  Yi Seul UM ,  Dae Sang YUN ,  Kwan Hee LEE ,  So Young LEE ,  Young Hoon LEE ,  Young Seo CHOI ,  Sun Young KIM ,  Ji Won SOHN ,  Do Young LEE ,  Seung Hoon LEE

IPC: H10K59/131 ,  H10K59/65 ,  H10K59/80 ,  H10K71/00 ,  H10K77/10

CPC classification number: H10K59/131 ,  H10K59/65 ,  H10K59/873 ,  H10K59/8794 ,  H10K71/851 ,  H10K77/111

Abstract: An electronic device includes a display device, which may be fabricated using a described method. The display device includes a glass substrate including a first surface, a second surface opposite the first surface, and a side surface between the first surface and the second surface, an outermost structure on the first surface of the glass substrate and located adjacent to an edge of one side of the glass substrate, and a display area including a plurality of light emitting areas on the first surface of the glass substrate and located farther from the edge of the one side of the glass substrate than the outermost structure is. A minimum distance from the side surface of the glass substrate to the outermost structure is equal to 130 μm or less.

公开(公告)号：US20150021602A1

公开(公告)日：2015-01-22

申请号：US14508766

申请日：2014-10-07

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung KANG ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA

IPC: H01L27/12 ,  H01L23/31 ,  H01L23/29 ,  H01L29/786 ,  H01L29/417

CPC classification number: H01L27/1248 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor array panel and a manufacturing method capable of forming an insulating layer made of different materials for a portion contacting an oxide semiconductor and a second portion without an additional process. Source and drain electrodes of the thin film transistor each include a lower layer and an upper layer. A first passivation layer contacts the lower layer of the source and drain electrodes but does not contact the upper layer of the source and drain electrodes, and a second passivation layer is disposed on the upper layer of the source and drain electrodes. The first passivation layer may be made of silicon oxide, and the second passivation may be made of silicon nitride.

Abstract translation: 一种薄膜晶体管阵列面板和能够形成由不同材料制成的绝缘层的制造方法，用于与氧化物半导体和第二部分接触的部分，而不需要额外的工艺。 薄膜晶体管的源极和漏极各自包括下层和上层。 第一钝化层接触源电极和漏电极的下层，但不接触源极和漏极的上层，并且第二钝化层设置在源极和漏极的上层。 第一钝化层可以由氧化硅制成，并且第二钝化可以由氮化硅制成。

公开(公告)号：US20250098456A1

公开(公告)日：2025-03-20

申请号：US18756339

申请日：2024-06-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Min LEE ,  Dong Jo KIM ,  Hyun KIM ,  Dan Bi CHOI

IPC: H10K59/131 ,  H10K77/10 ,  H10K102/00

Abstract: A display device includes a substrate including a main region and a pad area; a buffer layer on the main region of the substrate; a first electrode on the buffer layer; a first wiring protection layer on the substrate, the first wiring protection layer overlapping a bending area located between the main region and the pad area; a signal line on the first electrode and the first wiring protection layer; a display element layer on the signal line, the display element layer overlapping the main region; and a bending protection layer on the signal line, the bending protection layer overlapping the bending area, and the substrate includes a first substrate overlapping the main region, and a second substrate spaced apart from the first substrate with the bending area therebetween, and overlapping the pad area.

公开(公告)号：US20250057029A1

公开(公告)日：2025-02-13

申请号：US18646215

申请日：2024-04-25

Applicant: Samsung Display Co., LTD.

Inventor： Je Won YOO ,  Dong Jo KIM ,  Hyun KIM ,  Seung Min LEE

IPC: H10K77/10 ,  H10K59/12 ,  H10K71/00

Abstract: There is provided a display device including a second substrate corresponding to a main area, a pad area, and a bending area between the main area and the pad area, a first substrate at the main area and at the pad area and beneath the second substrate, and a display element layer at the main area and above the second substrate, wherein the first substrate includes a first sub-substrate overlapped with the main area, and including a first surface adjacent the second substrate, a second surface opposite to the first surface, and a first side directed toward the bending area, and a second sub-substrate spaced apart from the first sub-substrate and overlapped with the pad area, wherein a first inclined angle formed by the second surface and the first side is an obtuse angle.

公开(公告)号：US20230215954A1

公开(公告)日：2023-07-06

申请号：US18176454

申请日：2023-02-28

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： YONG SU LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung Kim ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L29/78618 ,  H01L27/1288 ,  H01L27/124 ,  H01L29/7869 ,  H01L27/1225 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  H10K59/1213

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20170154897A1

公开(公告)日：2017-06-01

申请号：US15427696

申请日：2017-02-08

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun KIM ,  Yoon Ho KHANG ,  Dong-Hoon LEE ,  Sang Ho PARK ,  Se Hwan YU ,  Cheol Kyu KIM ,  Yong-Su LEE ,  Sung Haeng CHO ,  Chong Sup CHANG ,  Dong Jo KIM ,  Jung Kyu LEE

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

公开(公告)号：US20150194534A1

公开(公告)日：2015-07-09

申请号：US14666461

申请日：2015-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。