-
公开(公告)号：US20170154897A1
公开(公告)日：2017-06-01
申请号：US15427696
申请日：2017-02-08
发明人： Do-Hyun KIM , Yoon Ho KHANG , Dong-Hoon LEE , Sang Ho PARK , Se Hwan YU , Cheol Kyu KIM , Yong-Su LEE , Sung Haeng CHO , Chong Sup CHANG , Dong Jo KIM , Jung Kyu LEE
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1237 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
-
2.发明申请公开(公告)号：US20150318317A1
公开(公告)日：2015-11-05
申请号：US14798123
申请日：2015-07-13
发明人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
IPC分类号： H01L27/12 , H01L21/475 , H01L21/4757 , H01L21/441 , H01L29/66 , H01L29/786
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译： 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。
-
公开(公告)号：US20150155309A1
公开(公告)日：2015-06-04
申请号：US14249199
申请日：2014-04-09
发明人： Xinxing LI , Do-Hyun KIM , Chan-Woo YANG , Jeong-Ju PARK , Jun-Hyun PARK , Xun ZHU
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/1259 , H01L27/1288
摘要： A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.
摘要翻译： 显示基板包括栅极金属图案，其包括设置在基底基板上的栅极线和与栅极线电连接的栅电极，与栅极金属图案完全重叠的有源图案，并且包括氧化物半导体和数据金属图案， 所述有源图案包括数据线，与所述栅极线电连接的源电极和与所述源电极间隔开的漏电极。 有源图案具有重叠区域，其中有源图案与源电极和漏电极重叠，并且有源图案不与源电极和漏电极重叠的曝光区域。 重叠区域的厚度和曝光区域的厚度相同。
-
公开(公告)号：US20130228772A1
公开(公告)日：2013-09-05
申请号：US13710889
申请日：2012-12-11
发明人： Youngjoo CHOI , Gwang-Bum KO , GwonHeon RYU , Joongeol KIM , Do-Hyun KIM , Sang-Moon MOH , WooGeun LEE , WONHEE LEE
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78693 , G02F1/134363 , H01L27/1225 , H01L27/124 , H01L27/1259 , H01L27/1288 , H01L29/66969
摘要： A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
摘要翻译： 薄膜晶体管基板包括基板; 基板上的栅电极; 栅电极上的半导体图案; 半导体图案上的源电极; 半导体图案上的漏电极，与源电极间隔开; 连接到所述漏电极的像素电极; 以及与像素电极部分重叠的公共电极。 半导体图案与像素电极在薄膜晶体管基板的同一层中，具有与像素电极的电特性不同的电特性。
-
5.发明申请公开(公告)号：US20170040349A1
公开(公告)日：2017-02-09
申请号：US15332079
申请日：2016-10-24
发明人： Je-Hun LEE , Ki-Won KIM , Do-Hyun KIM , Woo-Geun LEE , Kap-Soo YOON
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在 半导体氧化物层和栅电极。 栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。
-
6.发明申请公开(公告)号：US20140312344A1
公开(公告)日：2014-10-23
申请号：US14319012
申请日：2014-06-30
发明人： Je-Hun LEE , Ki-Won KIM , Do-Hyun KIM , Woo-Geun LEE , Kap-Soo YOON
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
摘要翻译： TFT阵列基板包括设置在绝缘基板上并包括沟道部分的半导体氧化物层，与半导体氧化物层重叠的栅极电极，插入在半导体氧化物层和栅电极之间的栅极绝缘层，以及设置在 半导体氧化物层和栅电极。 栅极绝缘层和钝化层中的至少一个包括氧氮化物层，并且氧氮化物层在氧氮化物层的位置更靠近半导体氧化物层的位置处具有比氮的浓度高的氧氮化物层。
-
公开(公告)号：US20130095590A1
公开(公告)日：2013-04-18
申请号：US13709774
申请日：2012-12-10
发明人： Je-Hun LEE , Do-Hyun KIM , Tae-Sang KIM , Kyung-Seok SON , Chang-Oh JEONG
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , G02F1/133512 , G02F1/133516 , G02F1/136209 , G02F1/1368 , G02F2001/133397 , G02F2001/136222 , G02F2001/136231 , G02F2001/13685 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.
-
8.发明申请公开(公告)号：US20170077246A1
公开(公告)日：2017-03-16
申请号：US15343234
申请日：2016-11-04
发明人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
IPC分类号： H01L29/417 , H01L29/786 , H01L21/4763 , H01L21/44 , H01L21/4757 , H01L21/465 , H01L29/66 , H01L27/12
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译： 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。
-
公开(公告)号：US20150311234A1
公开(公告)日：2015-10-29
申请号：US14795431
申请日：2015-07-09
发明人： Jae Woo PARK , Do-Hyun KIM , Young Joo CHOI , Dong Hoon LEE , Sung Haeng CHO
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45 , H01L29/4908 , H01L29/78618 , H01L29/7869
摘要： A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.
摘要翻译： 薄膜晶体管阵列面板包括：栅极线，设置在基板上并且包括栅电极，包括设置在基板上的氧化物半导体的半导体层以及设置在基板上的数据线层，并且包括与栅极交叉的数据线 线，连接到数据线的源电极和面对源电极的漏电极。 此外，数据线层的数据线，源电极或漏电极中的至少一个包括阻挡层和设置在阻挡层上的主配线层。 主配线层包括铜或铜合金。 此外，阻挡层包括金属氧化物，并且金属氧化物包括锌。
-
公开(公告)号：US20140076714A1
公开(公告)日：2014-03-20
申请号：US13760758
申请日：2013-02-06
发明人： Jin Ho HWANG , Do-Hyun KIM , Sang Won SHIN , Woo Song KIM , Chang-Oh JEONG
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C23C14/0063 , C23C14/35 , C23C16/455 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/3411 , H01J37/3417 , H01J37/3435 , H01J37/3438
摘要： A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.
摘要翻译： 溅射装置包括：溅射靶; 面向溅射靶的衬底支撑件，并且衬底被设置在衬底支撑件上; 位于所述基板支撑体上的所述溅射靶和所述基板之间的阳极掩模; 以及位于阳极掩模和溅射靶之间的气体分配构件，并且包括彼此分离的多个气体分配管。 每个气体分配管包括限定在其中的多个排放孔，并且气体被排出到被配置为接收溅射装置的真空室。
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.017 秒)
