LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND ALIGNMENT LAYER COMPOSITION FOR THE LIQUID CRYSTAL DISPLAY DEVICE
    12.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME AND ALIGNMENT LAYER COMPOSITION FOR THE LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
    液晶显示装置,液晶显示装置的制造方法和对准层组成

    公开(公告)号:US20150126093A1

    公开(公告)日:2015-05-07

    申请号:US14595961

    申请日:2015-01-13

    Abstract: A liquid crystal display device that includes an array substrate, an opposite substrate and a liquid crystal display layer is described. The array substrate includes a pixel electrode and a lower alignment layer. The pixel electrode has a plurality of slit portions extending in different directions. The lower alignment layer includes a reactive mesogen (RM) diamine is formed on the pixel electrode to induce an alignment direction of the liquid crystal molecules. An upper alignment layer is formed on a common electrode of the opposite substrate. The RM is cured at surfaces of the lower and upper alignment layers in response to ultraviolet (UV) light, so that liquid crystal molecules have a pretilt angle. Therefore, the aperture ratio and the response time may be improved, and afterimages may be decreased, so that display quality may be improved.

    Abstract translation: 描述了包括阵列基板,相对基板和液晶显示层的液晶显示装置。 阵列基板包括像素电极和下取向层。 像素电极具有沿不同方向延伸的多个狭缝部。 下取向层包括在像素电极上形成反应性液晶元(RM)二胺以诱导液晶分子的取向方向。 在相对基板的公共电极上形成上取向层。 响应于紫外(UV)光,RM在下取向层和上取向层的表面处固化,使得液晶分子具有预倾角。 因此,可以提高开口率和响应时间,并且可以减少残影,从而可以提高显示质量。

    LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    13.
    发明申请
    LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 失效
    液晶显示器及其制造方法

    公开(公告)号:US20130120682A1

    公开(公告)日:2013-05-16

    申请号:US13733568

    申请日:2013-01-03

    CPC classification number: G02F1/133514 G02F1/1362 G02F2001/136236

    Abstract: A method for manufacturing a liquid crystal display (“LCD”) includes; disposing a gate line including a gate electrode on a substrate, disposing a gate insulating layer on the gate line, disposing a data layer including a data line, source electrode and a drain electrode facing the source electrode on the gate insulating layer, disposing a color filter on the gate insulating layer, disposing an overcoat layer on the color filter, disposing a planarization layer on a portion of the overcoat layer corresponding to the gate line, the data line and the drain electrode, and disposing a pixel electrode in contacted with the overcoat layer in a region corresponding to the color filter.

    Abstract translation: 一种制造液晶显示器(“LCD”)的方法包括: 在基板上设置包括栅电极的栅极线,在栅极线上设置栅极绝缘层,在栅极绝缘层上设置包括数据线,源极电极和面对源电极的漏电极的数据层, 在栅极绝缘层上过滤,在滤色器上设置外涂层,在对应于栅极线,数据线和漏电极的外涂层的一部分上设置平坦化层,并且设置与 在与滤色器对应的区域中的外涂层。

    THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME
    14.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管基板,具有该液晶显示器的液晶显示器及其制造方法

    公开(公告)号:US20130095618A1

    公开(公告)日:2013-04-18

    申请号:US13709707

    申请日:2012-12-10

    Abstract: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.

    Abstract translation: 在薄膜晶体管中,第一和第二薄膜晶体管连接到第N栅极线和第M数据线,第一和第二子像素电极分别连接到第一和第二薄膜晶体管。 第三薄膜晶体管包括连接到第(N + 1)栅极线的栅电极,与栅电极重叠的半导体层,连接到第二子像素电极并与栅电极部分重叠的源极, 漏电极面对源电极。 第一辅助电极连接到漏电极并且设置在与第一和第二子像素电极相同的层上。 相对电极布置在与栅极线相同的层上,并且与第一辅助电极至少部分重叠,并且其间设置有至少一个绝缘层。

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