公开(公告)号：US11227875B2

公开(公告)日：2022-01-18

申请号：US16836651

申请日：2020-03-31

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Joon Seok Park ,  So Young Koo ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66 ,  G09G3/32 ,  H01L27/32

Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.

公开(公告)号：US11189677B2

公开(公告)日：2021-11-30

申请号：US16539761

申请日：2019-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Kwang Suk Kim ,  Tae Sang Kim ,  Geunchul Park ,  Kyung Jin Jeon

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, a first oxide transistor, a second oxide transistor, and a sub-pixel structure. The substrate has a display region including a plurality of sub-pixel regions and a peripheral region located in a side of the display region. The first oxide transistor is disposed in the peripheral region on the substrate, and includes a first oxide semiconductor pattern that includes tin (Sn). The second oxide transistor is disposed in the sub-pixel regions each on the substrate, and includes a second oxide semiconductor pattern. The sub-pixel structure is disposed on the second oxide transistor.

公开(公告)号：US11087696B2

公开(公告)日：2021-08-10

申请号：US16739012

申请日：2020-01-09

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Hwa Kim ,  Masataka Kano ,  Yeon Keon Moon ,  Joon Seok Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: G09G3/30 ,  G09G3/36 ,  G06F3/038 ,  G09G5/00 ,  G09G3/3291 ,  G09G3/3266 ,  H01L51/56 ,  H01L51/52

Abstract: A display device including: a pixel connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor which controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first active layer including an oxide semiconductor doped with a metal.

公开(公告)号：US20200286927A1

公开(公告)日：2020-09-10

申请号：US16783002

申请日：2020-02-05

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/12

Abstract: A display device includes a plurality of pixels respectively coupled to scan lines and data lines intersecting the scan lines, wherein at least some of the pixels includes a driving transistor including a substrate, a first insulating layer disposed on the substrate, a first active layer disposed on the first insulating layer, a first gate electrode disposed on the first active layer, and a first source electrode and a first drain electrode electrically connected to the first active layer, the first drain electrode being spaced apart from the first source electrode by a first distance, and a switching transistor including a second gate electrode disposed between the substrate and the first insulating layer, a second active layer disposed on the same layer as the first active layer, and a second source electrode and a second drain electrode electrically connected to the second active layer, the second drain electrode being spaced apart from the second source electrode by a second distance different from the first distance.

公开(公告)号：US11798498B2

公开(公告)日：2023-10-24

申请号：US17887901

申请日：2022-08-15

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: G09G3/3291 ,  G09G3/3266 ,  H01L29/786 ,  H01L27/12 ,  H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K59/12 ,  H10K102/10

CPC classification number: G09G3/3291 ,  G09G3/3266 ,  H01L27/1225 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H10K59/1201 ,  H10K2102/102 ,  H10K2102/103

Abstract: A method of manufacturing a display device including a pixel which is connected to a scan line and a data line intersecting the scan line. The pixel includes a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line. The driving transistor includes a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11664386B2

公开(公告)日：2023-05-30

申请号：US16906948

申请日：2020-06-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yeon Keon Moon ,  Tae Sang Kim ,  Joon Seok Park ,  Myoung Hwa Kim ,  Hyung Jun Kim ,  Sang Woo Sohn ,  Hye Lim Choi

IPC: H01L27/14 ,  H01L27/12

CPC classification number: H01L27/1237 ,  H01L27/124 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259

Abstract: A display device includes: a substrate; a first active layer of a first transistor and a second active layer of a second transistor on the substrate; a first gate insulating layer on the first active layer; a first gate electrode on the first gate insulating layer; a second gate insulating layer on the second active layer; and a second gate electrode on the second gate insulating layer, wherein a hydrogen concentration of the first gate insulating layer is lower than a hydrogen concentration of the second gate insulating layer.

公开(公告)号：US11521552B2

公开(公告)日：2022-12-06

申请号：US16846195

申请日：2020-04-10

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  So Young Koo ,  Myoung Hwa Kim ,  Eok Su Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L29/78 ,  G09G3/3266 ,  G09G3/3233 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  H01L27/32

Abstract: A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.

公开(公告)号：US11251247B2

公开(公告)日：2022-02-15

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun Kim ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sang Woo Sohn ,  Sang Won Shin ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757 ,  H01L27/12

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US10580902B2

公开(公告)日：2020-03-03

申请号：US15691207

申请日：2017-08-30

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Joon Seok Park ,  Jay Bum Kim ,  Jun Hyung Lim ,  Kyoung Seok Son

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US10217771B2

公开(公告)日：2019-02-26

申请号：US15436066

申请日：2017-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Joon Seok Park

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.