公开(公告)号：US11112665B2

公开(公告)日：2021-09-07

申请号：US16276529

申请日：2019-02-14

Applicant: Samsung Display Co., Ltd.

Inventor： Ju Hyun Lee ,  Gyung Min Baek ,  Hyun Eok Shin ,  Hong Sick Park ,  Sang Won Shin

IPC: H01L27/14 ,  G02F1/1362 ,  H01L27/12

Abstract: A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30° to 75°.

公开(公告)号：US10734461B2

公开(公告)日：2020-08-04

申请号：US16250642

申请日：2019-01-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hee Lee ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/51

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US20190086754A1

公开(公告)日：2019-03-21

申请号：US15906991

申请日：2018-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1335 ,  H01L21/3213 ,  H01L21/285 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/133553 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2001/136295 ,  G02F2201/12 ,  G02F2201/40 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/32139 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/4908 ,  H01L29/4958

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

公开(公告)号：US10192944B2

公开(公告)日：2019-01-29

申请号：US15237866

申请日：2016-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hee Lee ,  Hyun Ju Kang ,  Sang Won Shin

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/49 ,  H01L29/423 ,  H01L29/51 ,  H01L29/786

Abstract: An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

公开(公告)号：US10386687B2

公开(公告)日：2019-08-20

申请号：US15906991

申请日：2018-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: H01L27/12 ,  H01L29/49 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/285 ,  H01L21/3213

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.

公开(公告)号：US20180040739A1

公开(公告)日：2018-02-08

申请号：US15662502

申请日：2017-07-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SUNG WOOK WOO ,  Chang Ho Lee ,  Kyung Lae Rho ,  Doo Hyoung Lee ,  Sung Chan Jo ,  Sang Woo Sohn ,  Sang Won Shin ,  Soo Im Jeong ,  Chang Yong Jeong

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/10 ,  H01L29/04

CPC classification number: H01L29/78693 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

公开(公告)号：US09543444B2

公开(公告)日：2017-01-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Katsushi Kishimoto ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。

公开(公告)号：US20150228797A1

公开(公告)日：2015-08-13

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate, The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

Abstract translation: 薄膜晶体管阵列面板包括衬底和设置在衬底上的栅极线。栅极线包括栅电极。 栅极绝缘层设置在栅极线上。 氧化物半导体层设置在栅极绝缘层上。 氧化物半导体层至少部分地与栅电极重叠。 数据线设置在氧化物半导体层上。 数据线包括面对源电极的源电极和漏电极。 氧化物半导体层包括钨，铟，锌或锡。

公开(公告)号：US11793044B2

公开(公告)日：2023-10-17

申请号：US16704437

申请日：2019-12-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Min Lee ,  Sang Woo Sohn ,  Do Keun Song ,  Sang Won Shin ,  Hyun Eok Shin ,  Su Kyoung Yang ,  Kyeong Su Ko ,  Sang Gab Kim ,  Joon Geol Lee

IPC: H10K59/131 ,  H01L27/12 ,  H01L21/02

CPC classification number: H10K59/1315 ,  H01L27/1259 ,  H01L21/02068

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

公开(公告)号：US11099441B2

公开(公告)日：2021-08-24

申请号：US16460829

申请日：2019-07-02

Applicant: Samsung Display Co., Ltd.

Inventor： Chan Woo Yang ,  Hong Sick Park ,  Hyun Eok Shin ,  Joon Yong Park ,  Gyung Min Baek ,  Sang Won Shin ,  Ju Hyun Lee

IPC: H01L29/49 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1335 ,  H01L21/285 ,  G02F1/1368 ,  H01L21/3213

Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive layer and a metal oxide layer stacked on the conductive layer, wherein the metal oxide layer comprises molybdenum (Mo), tantalum (Ta), and oxygen (O). The conductive layer includes a first metal layer on the first base, and a second metal layer between the first metal layer and the metal oxide layer. The second metal layer has a higher electrical conductivity than the first metal layer, and a thickness of the second metal layer is greater than a thickness of the first metal layer.