Display device and method of manufacturing the same

    公开(公告)号:US11824061B2

    公开(公告)日:2023-11-21

    申请号:US16783002

    申请日:2020-02-05

    CPC classification number: H01L27/1225 H01L27/124 H01L27/127 H01L27/1251

    Abstract: A display device includes a plurality of pixels respectively coupled to scan lines and data lines intersecting the scan lines, wherein at least some of the pixels includes a driving transistor including a substrate, a first insulating layer disposed on the substrate, a first active layer disposed on the first insulating layer, a first gate electrode disposed on the first active layer, and a first source electrode and a first drain electrode electrically connected to the first active layer, the first drain electrode being spaced apart from the first source electrode by a first distance, and a switching transistor including a second gate electrode disposed between the substrate and the first insulating layer, a second active layer disposed on the same layer as the first active layer, and a second source electrode and a second drain electrode electrically connected to the second active layer, the second drain electrode being spaced apart from the second source electrode by a second distance different from the first distance.

    Display device and method for manufacturing the same

    公开(公告)号:US11469283B2

    公开(公告)日:2022-10-11

    申请号:US16952762

    申请日:2020-11-19

    Abstract: A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.

    Display device for driving at high speed

    公开(公告)号:US11430859B2

    公开(公告)日:2022-08-30

    申请号:US16885598

    申请日:2020-05-28

    Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

    DISPLAY DEVICE WITH REDUCED DETERIORATION
    4.
    发明申请
    DISPLAY DEVICE WITH REDUCED DETERIORATION 有权
    具有减少检测功能的显示设备

    公开(公告)号:US20160300526A1

    公开(公告)日:2016-10-13

    申请号:US14926922

    申请日:2015-10-29

    CPC classification number: G09G3/3233 G09G2300/0842 G09G2320/043

    Abstract: A display device includes: a plurality of pixels, wherein each of the plurality of pixels includes at least two double-gate transistors including a first gate electrode and a second gate electrode; conduction between source electrodes and drain electrodes of the at least two double-gate transistors is controlled by a voltage applied to the first gate electrode, and electrical connection between the second gate electrode and the first gate electrode of each of the at least two double-gate transistors is determined depending on a polarity of a voltage applied on average to each of the at least two double-gate transistors.

    Abstract translation: 显示装置包括:多个像素,其中所述多个像素中的每一个包括至少两个包括第一栅电极和第二栅电极的双栅晶体管; 所述至少两个双栅极晶体管的源电极和漏电极之间的导通由施加到所述第一栅电极的电压以及所述至少两个双栅极晶体管中的每一个的所述第二栅电极和所述第一栅电极之间的电连接来控制, 取决于对至少两个双栅极晶体管中的每一个平均施加的电压的极性来确定栅极晶体管。

    Display device
    6.
    发明授权

    公开(公告)号:US11271015B2

    公开(公告)日:2022-03-08

    申请号:US16876984

    申请日:2020-05-18

    Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

    Wiring substrate and display device including the same which suppress deterioration of thin film transistor

    公开(公告)号:US11152399B2

    公开(公告)日:2021-10-19

    申请号:US16453976

    申请日:2019-06-26

    Abstract: A display device in which a display area and a non-display area are defined, the display device including a wiring substrate, the wiring substrate including: a base substrate; a first thin film transistor disposed on the base substrate, located in the non-display area, and including a first gate pattern, a first semiconductor pattern disposed on the first gate pattern, a first source pattern disposed on the first semiconductor pattern, and a first drain pattern disposed on the first semiconductor pattern and spaced apart from the first source pattern; and a second thin film transistor disposed on the base substrate and located in the display area. A first channel width of the first thin film transistor is greater than a first overlap length of the first gate pattern, the first semiconductor pattern, and the first drain pattern.

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