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    DISPLAY APPARATUS AND MANUFACTURING METHOD OF THE SAME
    12.
    发明申请
    DISPLAY APPARATUS AND MANUFACTURING METHOD OF THE SAME 有权

    公开(公告)号：US20210343959A1

    公开(公告)日：2021-11-04

    申请号：US17376453

    申请日：2021-07-15

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jintaek Kim ,  Kiwan Ahn ,  Jinwoo Lee ,  Donghyun Kim ,  Pilsuk Lee

    IPC: H01L51/05 ,  H01L27/12 ,  H01L27/32 ,  H01L51/56

    Abstract: A display apparatus includes a plurality of pixels each including a substrate on which are disposed: an interlayer insulating layer; a driving thin film transistor in which a driving semiconductor layer and a driving gate electrode are each disposed between the substrate and the first interlayer insulating layer; a first capacitor in which a first electrode, a first dielectric pattern and a second electrode are sequentially stacked, the first electrode being connected to the driving gate electrode; and a plurality of contact plugs extended through a thickness of the interlayer insulating layer, with which the driving thin film transistor and the first capacitor are respectively connected to electrodes outside thereof. Lateral surfaces of the first dielectric pattern are covered by the interlayer insulating layer, and the first dielectric pattern within the first capacitor is disposed spaced apart from each of the contact plugs.

    ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    15.
    发明申请
    ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号：US20170077195A1

    公开(公告)日：2017-03-16

    申请号：US15255632

    申请日：2016-09-02

    Applicant: Samsung Display Co., Ltd.

    Inventor： Taean Seo ,  Kihyun Kim ,  Juchan Park ,  Younggug Seol ,  Pilsuk Lee ,  Jinhwan Choi

    IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

    CPC classification number: H01L27/3246 ,  H01L51/5225 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5338

    Abstract: An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the OLED display includes an OLED formed over a substrate, the OLED including a first electrode, a second electrode formed over the first electrode and an intermediate layer interposed between the first and second electrodes. A pixel defining layer is formed over the substrate and adjacent to the OLED, and a protection layer is formed over the second electrode and configured to protect the OLED. A thin-film encapsulating layer is formed over the protection layer and sealing the OLED so as to protect the OLED from the environment, at least a part of the thin-film encapsulating layer contacting the pixel defining layer.

    Abstract translation: 公开了一种有机发光二极管（OLED）显示器及其制造方法。 一方面，OLED显示器包括形成在衬底上的OLED，所述OLED包括第一电极，形成在第一电极上的第二电极和插入在第一和第二电极之间的中间层。 像素限定层形成在衬底上并与OLED相邻，并且保护层形成在第二电极上并被配置为保护OLED。 薄膜封装层形成在保护层之上并密封OLED，以便保护OLED免受环境影响，薄膜封装层的至少一部分与像素限定层接触。

    Display panel
    16.
    发明授权
    Display panel 有权

    公开(公告)号：US12223910B2

    公开(公告)日：2025-02-11

    申请号：US18490828

    申请日：2023-10-20

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hyewon Kim ,  Sungjin Hong ,  Yoomin Ko ,  Sunho Kim ,  Juchan Park ,  Pilsuk Lee ,  Chung Sock Choi

    IPC: G09G3/3258 ,  H10K59/122 ,  H10K59/124 ,  H10K59/131

    Abstract: A display panel includes a transistor, a light emitting device electrically connected to the transistor, a connection wiring electrically connecting the transistor to the light emitting device and including side surfaces, a capping pattern disposed on the transistor and contacting at least a side surface among side surfaces, an upper insulating layer disposed on the transistor and including a first opening that overlaps the at least the side surface, and a pixel definition layer disposed on the upper insulating layer and covering the first opening of the upper insulating layer.

    Gate driver and display device including the same
    19.
    发明授权
    Gate driver and display device including the same 有权

    公开(公告)号：US11978402B2

    公开(公告)日：2024-05-07

    申请号：US18174521

    申请日：2023-02-24

    Applicant: Samsung Display Co., LTD.

    Inventor： Sunho Kim ,  Yoomin Ko ,  Hyewon Kim ,  Juchan Park ,  Pilsuk Lee ,  Chung Sock Choi ,  Sungjin Hong

    IPC: G09G3/3241 ,  G09G3/3266 ,  H03K17/687

    CPC classification number: G09G3/3241 ,  G09G3/3266 ,  H03K17/6872

    Abstract: A gate driver includes: a signal generator configured to generate a gate signal, and output the gate signal to a first output terminal; and an inverted signal generator configured to generate an inverted gate signal based on the gate signal, and output the inverted gate signal to a second output terminal, wherein the inverted signal generator includes: a first transistor connected between a first node connected to the second output terminal and a first driving power supply terminal, and including a PMOS transistor; and a second transistor connected between the first node and a second driving power supply terminal, and including an NMOS transistor, and wherein a second node connected to the first output terminal is connected to a gate electrode of each of the first and second transistors.

    Display device including first high permittivity insulation layer on first active pattern
    20.
    发明授权
    Display device including first high permittivity insulation layer on first active pattern 有权

    公开(公告)号：US11910650B2

    公开(公告)日：2024-02-20

    申请号：US17510040

    申请日：2021-10-25

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jin Woo Lee ,  Jintaek Kim ,  Yeonhong Kim ,  Pilsuk Lee

    IPC: H10K59/12 ,  H10K59/121 ,  H10K59/124 ,  H10K77/10

    CPC classification number: H10K59/1216 ,  H10K59/124 ,  H10K77/111

    Abstract: A display device includes: a substrate; a buffer layer on the substrate; a first active pattern and a second active pattern on the buffer layer and spaced apart from each other; a first gate insulation layer on the first active pattern and the second active pattern; a first gate electrode and a second gate electrode on the first gate insulation layer, the first gate electrode and the second gate electrode respectively overlapping the first active pattern and the second active pattern; a second gate insulation layer on the first gate electrode and the second gate electrode; and a capacitor electrode on the second gate insulation layer, the capacitor electrode overlapping the first gate electrode, wherein a permittivity of the first gate insulation layer is greater than a permittivity of the buffer layer.

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