Abstract:
A display device, including: a display panel including a light emitting element and an encapsulation layer covering the light emitting element; a color conversion panel overlapping the display panel, the color conversion panel including a color conversion element; a column spacer between the display panel and the color conversion panel; a filling layer filling a space between the display panel and the color conversion panel and surrounding the column spacer; and a buffer layer between the column spacer and the encapsulation layer of the display panel, the buffer layer including silicon oxycarbide (SiOxCy).
Abstract:
A light emitting diode display includes: a substrate; a light emitting element on the substrate; and a capping layer on the organic light emitting element and including a plurality of refractive layers each including a low refraction layer and a high refraction layer, wherein the high refraction layer includes a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the low refraction layer includes a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and wherein the second inorganic material comprises at least one selected from LiF, AlF3, NaF, KF, RbF, CaF2, SrF2, and YbF2.
Abstract:
An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
Abstract:
A display device is provided. The display device includes: a first base; light-emitting elements on the first base and in the pixels, respectively; a second base facing the first base; and a light-blocking/supporting member between the light-emitting elements and the second base and at a boundary of each of the pixels, wherein the light-blocking/supporting member includes a light-blocking portion and a plurality of supporting portions in the light-blocking portion.
Abstract:
An organic light emitting diode display, including a substrate; a thin film transistor on the substrate; a first electrode on the thin film transistor and electrically connected to the thin film transistor; an organic emission layer on the first electrode; a second electrode on the organic emission layer; and a first capping layer on the second electrode and a second capping layer on the first capping layer, the second capping layer being thicker than the first capping layer.
Abstract:
A quantum dot includes: a core including at least one first positive ion precursor and at least one negative ion precursor; a shell including at least one second positive ion precursor and at least one negative ion precursor and wrapping the core; and a ligand formed on a surface of the shell, wherein the first positive ion precursor is an n-period element and the second positive ion precursor is an (n-1)-period element, where n is an integer of 3 to 6.
Abstract:
A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface layer. The interface layer includes a fluorinated silicon oxide. The semiconductor layer includes a p-type oxide semiconductor material.
Abstract:
An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminium iodide (AlI3), thorium(IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.
Abstract:
In an aspect, a light-emitting display device and a method of fabricating the same is provided. The light-emitting display device includes a display substrate which comprises a pixel region and a non-pixel region; an encapsulation member which is disposed above the display substrate; and a destructive interference unit.
Abstract:
A display device includes a base; a light emitting element on the base; a capping layer on the light emitting element; a thin-film encapsulation layer including a first inorganic layer on the capping layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer; and a wavelength conversion pattern on the thin-film encapsulation layer and overlapping the light emitting element, wherein the first inorganic layer includes two sub-inorganic layers having different refractive indices.