公开(公告)号：US20210226153A1

公开(公告)日：2021-07-22

申请号：US17202229

申请日：2021-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Chanwoo Yang ,  Juhyun Lee ,  Sanggab Kim ,  Joonyong Park ,  Seungwook Chang ,  Jinwook Jeong

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

Abstract: A light-emitting device may include a first electrode, a second electrode, and a light-emitting layer therebetween. The first electrode may include a reflection layer and a metal oxide layer provided on the reflection layer. The metal oxide layer may be provided between the reflection layer and the light-emitting layer. The metal oxide layer may include molybdenum dioxide and an oxide of a group-V element, and a content of the group-V element to a total amount of the metal oxide layer may range from 2 at % to 10 at.

公开(公告)号：US10283529B2

公开(公告)日：2019-05-07

申请号：US15337401

申请日：2016-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Shinil Choi ,  Hyunmin Cho ,  Sanggab Kim ,  Sunghoon Yang ,  Yugwang Jeong ,  Byungdu Ahn

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/32 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a thin-film transistor includes forming an oxide semiconductor on a substrate, stacking an insulating layer and a metal layer on the substrate to cover the oxide semiconductor, forming a photosensitive pattern on the metal layer, forming a gate electrode by etching the metal layer using the photosensitive pattern as a mask, where a part of the gate electrode overlaps a first oxide semiconductor region of the oxide semiconductor, forming a gate insulating film by partially etching the insulating layer using the photosensitive pattern as a mask, where the gate insulating film includes a first insulating region with a first thickness under the photosensitive pattern and a second insulating region with a second thickness less than the first thickness, and performing plasma processing on the gate insulating film so that a second oxide semiconductor region of the oxide semiconductor under the second insulating region becomes conductive.

公开(公告)号：US12185593B2

公开(公告)日：2024-12-31

申请号：US18224083

申请日：2023-07-20

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunmin Cho ,  Taesung Kim ,  Yunjong Yeo ,  Sanggab Kim ,  Daewon Choi

IPC: H10K59/122 ,  H10K50/813 ,  H10K50/822 ,  H10K71/00 ,  H10K102/00

Abstract: An embodiment of a display device includes a substrate including a display area; an organic layer and having a protrusion protruding in a thickness direction of the substrate and overlapping the display area; a first electrode on the organic layer and overlapping the display area; a pixel defining layer covering the protrusion and an edge of the first electrode and having an opening portion overlapping the first electrode; an emission layer on the first electrode and overlapping the opening portion; and a second electrode on the emission layer, wherein the pixel defining layer includes an inorganic material, and a first distance from an upper surface of the substrate to a lower surface of the first electrode is less than a second distance from the upper surface of the substrate to an upper surface of the protrusion, the lower surface of the first electrode facing the upper surface of the substrate.

公开(公告)号：US12016224B2

公开(公告)日：2024-06-18

申请号：US17821463

申请日：2022-08-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Taewook Kang ,  Kyeongsu Ko ,  Sanggab Kim ,  Wooyong Sung ,  Joongeol Lee ,  Shinil Choi

IPC: H10K59/131 ,  H10K50/82 ,  H10K50/84 ,  H10K59/00 ,  H10K59/10 ,  H10K59/124

CPC classification number: H10K59/131 ,  H10K50/82 ,  H10K50/84 ,  H10K59/00 ,  H10K59/10 ,  H10K59/124

Abstract: A display panel including a glass substrate having an opening area, and a display area at least partially surrounding the opening area; a thin film transistor on the display area including a semiconductor layer and a gate electrode; a display element electrically connected to the thin film transistor; a multi-layer including an insulating layer and a lower insulating layer. The insulating layer is between the glass substrate and the display element and the lower insulating layer is between the glass substrate and the insulating layer; and a thin-film encapsulation layer covering the display element including an inorganic encapsulation layer and an organic encapsulation layer. The multi-layer includes a first groove between the opening area and the display area. A first width of a portion of the first groove in the lower insulating layer is greater than a second width of a portion of the first groove in the insulating layer.

公开(公告)号：US11758788B2

公开(公告)日：2023-09-12

申请号：US17951200

申请日：2022-09-23

Applicant: Samsung Display Co., Ltd.

Inventor： Seon Uk Lee ,  Kanguk Kim ,  Sanggab Kim ,  Donchan Cho ,  Tae Hyung Hwang ,  KyeongSu Ko ,  Sungwon Cho

IPC: H10K59/38 ,  H10K50/84 ,  H10K50/856 ,  H10K50/86 ,  H10K59/122 ,  H10K59/126 ,  H10K71/00

CPC classification number: H10K59/38 ,  H10K50/841 ,  H10K50/856 ,  H10K50/865 ,  H10K59/122 ,  H10K59/126 ,  H10K71/00

Abstract: Disclosed are display panels and methods of manufacturing substrates. The display panel comprises a lower display substrate that includes a plurality of light emitting elements, and an upper display substrate that includes a color control layer and is on the lower display substrate. The color control layer includes a plurality of walls each of which includes a wall base including an organic material and a reflective layer including a metallic material, and the color control layer also includes a plurality of color control parts which are disposed between the plurality of walls and at least one of which includes a quantum dot. The reflective layer surrounds at least a portion of a sidewall of the wall base, which results in an increase in luminous efficiency and an improvement in brightness.

公开(公告)号：US11367742B2

公开(公告)日：2022-06-21

申请号：US16544602

申请日：2019-08-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Kyeongsu Ko ,  Sanggab Kim ,  Hongsick Park ,  Sangwoo Sohn ,  Dokeun Song ,  Sangwon Shin ,  Sukyoung Yang ,  Dongmin Lee

IPC: H01L27/12

Abstract: A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.

公开(公告)号：US20220173177A1

公开(公告)日：2022-06-02

申请号：US17369877

申请日：2021-07-07

Applicant: Samsung Display Co., Ltd.

Inventor： Hyunmin Cho ,  Taesung Kim ,  Yunjong Yeo ,  Sanggab Kim ,  Daewon Choi

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: An embodiment of a display device includes a substrate including a display area; an organic layer and having a protrusion protruding in a thickness direction of the substrate and overlapping the display area; a first electrode on the organic layer and overlapping the display area; a pixel defining layer covering the protrusion and an edge of the first electrode and having an opening portion overlapping the first electrode; an emission layer on the first electrode and overlapping the opening portion; and a second electrode on the emission layer, wherein the pixel defining layer includes an inorganic material, and a first distance from an upper surface of the substrate to a lower surface of the first electrode is less than a second distance from the upper surface of the substrate to an upper surface of the protrusion, the lower surface of the first electrode facing the upper surface of the substrate.

公开(公告)号：US11211441B2

公开(公告)日：2021-12-28

申请号：US16199226

申请日：2018-11-26

Applicant: Samsung Display Co., LTD.

Inventor： Yu-Gwang Jeong ,  Subin Bae ,  Joongeol Lee ,  Sanggab Kim

IPC: H01L27/32 ,  H01L51/50

Abstract: An OLED device includes a substrate, a first active layer, a first gate electrode, a second gate electrode, first source and first drain electrodes, a first high dielectric constant (high-k) insulation structure, and a light emitting structure. The substrate has a first region and a second region. The first active layer is disposed in the first region on the substrate. The first gate electrode is disposed on the first active layer, and has a first thickness. The second gate electrode is disposed on the first gate electrode. The first source electrode and first drain electrode are disposed on the second gate electrode, and constitutes a first semiconductor element together with the first active layer and the first gate electrode. The first high-k insulation structure is disposed between the first gate electrode and the second gate electrode, and is spaced apart from the first source electrode and first drain electrode.

公开(公告)号：US11183554B2

公开(公告)日：2021-11-23

申请号：US16709457

申请日：2019-12-10

Applicant: Samsung Display Co., Ltd.

Inventor： Dongmin Lee ,  Sangwoo Sohn ,  Sukyoung Yang ,  Dokeun Song ,  Kyeong Su Ko ,  Sanggab Kim ,  Sangwon Shin ,  Hyuneok Shin ,  Yunjong Yeo ,  Joongeol Lee

IPC: H01L27/32 ,  H01L29/49 ,  H01L51/56

Abstract: A display device includes a first signal line including a first layer disposed on a substrate and containing aluminum (Al), a second layer disposed on the first layer and containing titanium nitride (TiNx), and a third layer disposed on the second layer and containing titanium (Ti), a second signal line crossing the first signal line, a first transistor including a first gate electrode connected to the first signal line and a first source electrode connected to the second signal line, and an organic light emitting diode disposed in a display area of the substrate to generate light corresponding to a data signal applied to the second signal line.

公开(公告)号：US20180375057A1

公开(公告)日：2018-12-27

申请号：US15834524

申请日：2017-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Hyuneok Shin ,  Chanwoo Yang ,  Juhyun Lee ,  Sanggab Kim ,  Joonyong Park ,  Seungwook Chang ,  Jinwook Jeong

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

Abstract: A light-emitting device may include a first electrode, a second electrode, and a light-emitting layer therebetween. The first electrode may include a reflection layer and a metal oxide layer provided on the reflection layer. The metal oxide layer may be provided between the reflection layer and the light-emitting layer. The metal oxide layer may include molybdenum dioxide and an oxide of a group-V element, and a content of the group-V element to a total amount of the metal oxide layer may range from 2 at % to 10 at.