Semiconductor device and a display device including the same

    公开(公告)号:US10153336B2

    公开(公告)日:2018-12-11

    申请号:US15583244

    申请日:2017-05-01

    Abstract: A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.

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