公开(公告)号：US10090401B2

公开(公告)日：2018-10-02

申请号：US15682113

申请日：2017-08-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yongjae Jang ,  Waljun Kim ,  Joosun Yoon

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L51/05

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first insulating layer, and a gate electrode. The gate electrode overlaps the semiconductor layer. The thin film transistor includes a second insulating layer on the gate electrode, and an electrode structure on the second insulating layer. The electrode structure is connected to the gate electrode through a via hole. The thin film transistor includes a source electrode and a drain electrode passing through the first insulating layer and the second insulating layer to be connected to the semiconductor layer. The semiconductor layer includes a channel area overlapping the gate electrode, a source area connected to the source electrode, a drain area connected to the drain electrode, a lightly doped source area, and a lightly doped drain area. The electrode structure overlaps at least one of the lightly doped source area or the lightly doped drain area.

公开(公告)号：US11152400B2

公开(公告)日：2021-10-19

申请号：US16884182

申请日：2020-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20180053836A1

公开(公告)日：2018-02-22

申请号：US15682113

申请日：2017-08-21

Applicant: Samsung Display Co., Ltd.

Inventor： Yongjae Jang ,  Waljun Kim ,  Joosun Yoon

IPC: H01L29/66 ,  H01L29/45 ,  H01L27/12 ,  H01L29/49 ,  H01L51/05

CPC classification number: H01L29/66765 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78627 ,  H01L51/0512 ,  H01L51/0545

Abstract: A thin film transistor includes a substrate, a semiconductor layer, a first insulating layer, and a gate electrode. The gate electrode overlaps the semiconductor layer. The thin film transistor includes a second insulating layer on the gate electrode, and an electrode structure on the second insulating layer. The electrode structure is connected to the gate electrode through a via hole. The thin film transistor includes a source electrode and a drain electrode passing through the first insulating layer and the second insulating layer to be connected to the semiconductor layer. The semiconductor layer includes a channel area overlapping the gate electrode, a source area connected to the source electrode, a drain area connected to the drain electrode, a lightly doped source area, and a lightly doped drain area. The electrode structure overlaps at least one of the lightly doped source area or the lightly doped drain area.

公开(公告)号：US10700104B2

公开(公告)日：2020-06-30

申请号：US16047248

申请日：2018-07-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233 ,  H01L29/786 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US09893285B2

公开(公告)日：2018-02-13

申请号：US15093319

申请日：2016-04-07

Applicant: Samsung Display Co., Ltd.

Inventor： Waljun Kim ,  Yeonhong Kim ,  Junghyun Kim ,  Jongyun Kim ,  Sungeun Lee ,  Kwangyoung Choi

IPC: H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L51/0018 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5012 ,  H01L51/5221 ,  H01L51/5225 ,  H01L51/5228 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.

公开(公告)号：US09608089B2

公开(公告)日：2017-03-28

申请号：US15056033

申请日：2016-02-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongyun Kim ,  Waljun Kim ,  Junghyun Kim ,  Kiwan Ahn

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/12 ,  H01L29/66 ,  H01L21/266 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L29/66757 ,  H01L21/0273 ,  H01L21/266 ,  H01L21/32134 ,  H01L27/1288 ,  H01L29/78621 ,  H01L2227/323

Abstract: Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.

公开(公告)号：US20200295048A1

公开(公告)日：2020-09-17

申请号：US16884182

申请日：2020-05-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinwoo Lee ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  G09G3/3266 ,  G09G3/3275 ,  H01L29/417 ,  G09G3/3233

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US20190393415A1

公开(公告)日：2019-12-26

申请号：US16450796

申请日：2019-06-24

Applicant: Samsung Display Co., Ltd.

Inventor： Waljun Kim ,  Jinyeong Kim ,  Kiwan Ahn ,  Joosun Yoon

IPC: H01L51/00 ,  H01L27/32

Abstract: An organic light-emitting display apparatus includes a pixel-defining layer configured to surround a plurality of pixels while exposing an emission area of the plurality of pixels on a substrate; and a spacer provided on the pixel-defining layer and configured to allow a mask to be placed on the spacer, the mask being arranged for deposition of an emission layer in the emission area, wherein a distance in a plane direction between the spacer and each of the plurality of pixels is within 1 μm. A color mixture between pixels may be prevented by suppressing the shadow phenomenon in deposition of an emission layer such that performance and reliability of the organic light-emitting display apparatus may be significantly improved.

公开(公告)号：US20190051669A1

公开(公告)日：2019-02-14

申请号：US16047248

申请日：2018-07-27

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Jinwoo LEE ,  Waljun Kim ,  Kiwan Ahn ,  Yongjae Jang ,  Jaehyuk Jang ,  Yugwang Jeong

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a first conductive layer including first lines for transmitting data signals to the thin film transistors; a second conductive layer disposed on the first conductive layer and including second lines for supplying a driving voltage to the thin film transistors; a first insulating layer disposed between a semiconductor layer and the first conductive layer and including a first material layer; a second insulating layer disposed between the first conductive layer and the second conductive layer and including a second material layer having a dielectric constant greater than that of the first material layer; and a contact plug penetrating the second insulating layer and the first insulating layer, and connecting the second conductive layer to the semiconductor layer. A taper angle of the contact plug in the second material layer is greater than that of the contact plug in the first material layer.

公开(公告)号：US11785822B2

公开(公告)日：2023-10-10

申请号：US17089707

申请日：2020-11-04

Applicant: Samsung Display Co., Ltd.

Inventor： Wonjun Lee ,  Hyunbae Park ,  Waljun Kim ,  Kiwan Ahn ,  Joosun Yoon ,  Kilyoung Lee

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  G02F1/13 ,  G02F1/1335 ,  G02F1/1362

CPC classification number: H01L27/322 ,  H01L27/3218 ,  H01L51/5253 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/136209 ,  G09G2300/0408 ,  G09G2300/0804 ,  H01L27/3265 ,  H01L27/3276 ,  H01L2251/301

Abstract: A display apparatus includes: a first pixel, a second pixel, and a third pixel respectively configured to emit different colors; a first partition wall on a first light-emitting device of the first pixel; and a first color conversion layer corresponding to an emission area of the first pixel. The first partition wall has a first opening corresponding to the first light-emitting device and a first concave portion spaced apart from the first opening in a plan view. The first color conversion layer includes first quantum dots configured to convert incident light into first color light.