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公开(公告)号:US10211422B2
公开(公告)日:2019-02-19
申请号:US15698810
申请日:2017-09-08
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongyun Kim
Abstract: A transparent display device includes: a display panel displaying an image with light and including: a pixel area at which light is generated, a transmission area at which light transmits through the display panel, and a gate line area including a gate line; at the pixel area, a display element generating the light, and a driving circuit driving the display element; and an insulating layer pattern at the pixel and gate line areas. The driving circuit includes a semiconductor layer, gate, source and drain electrodes, and a gate insulating layer on the gate line and electrode, the display element includes pixel and common electrodes, and a light emitting layer, the insulating layer pattern at the pixel area is between the gate insulating layer and the common electrode, and the insulating layer pattern at the gate line area defines a groove at the transmission area.
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公开(公告)号:US20170117476A1
公开(公告)日:2017-04-27
申请号:US15093319
申请日:2016-04-07
Applicant: Samsung Display Co., Ltd.
Inventor: Waljun KIM , Yeonhong Kim , Junghyun Kim , Jongyun Kim , Sungeun Lee , Kwangyoung Choi
CPC classification number: H01L51/0018 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L51/5012 , H01L51/5221 , H01L51/5225 , H01L51/5228 , H01L51/5253 , H01L51/56 , H01L2227/323
Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
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公开(公告)号:US10347772B2
公开(公告)日:2019-07-09
申请号:US15470119
申请日:2017-03-27
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongyun Kim
IPC: H01L27/12 , H01L27/32 , H01L29/423 , H01L29/786
Abstract: A display device includes a switching transistor, a driving transistor, a storage capacitor connected to the switching and driving transistors, and an organic light-emitting diode connected to the driving transistor. The driving transistor is connected to the switching transistor. The driving transistor includes a semiconductor layer having a channel region, first doped regions at sides of the channel region, and second doped regions doped with impurities of a concentration greater than the first doped regions. A first electrode layer is over an insulating layer, which covers the semiconductor layer. The electrode layer includes convex portions extending toward the first doped regions and covering an end of the channel region. At least one of the convex portions has a width greater than or equal to a width of the end of the channel region.
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公开(公告)号:US10020447B2
公开(公告)日:2018-07-10
申请号:US15861541
申请日:2018-01-03
Applicant: Samsung Display Co., Ltd.
Inventor: Waljun Kim , Yeonhong Kim , Junghyun Kim , Jongyun Kim , Sungeun Lee , Kwangyoung Choi
CPC classification number: H01L51/0018 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L51/5012 , H01L51/5221 , H01L51/5225 , H01L51/5228 , H01L51/5253 , H01L51/56 , H01L2227/323
Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
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公开(公告)号:US09893285B2
公开(公告)日:2018-02-13
申请号:US15093319
申请日:2016-04-07
Applicant: Samsung Display Co., Ltd.
Inventor: Waljun Kim , Yeonhong Kim , Junghyun Kim , Jongyun Kim , Sungeun Lee , Kwangyoung Choi
CPC classification number: H01L51/0018 , H01L27/3211 , H01L27/3244 , H01L27/3246 , H01L51/5012 , H01L51/5221 , H01L51/5225 , H01L51/5228 , H01L51/5253 , H01L51/56 , H01L2227/323
Abstract: A method of manufacturing an organic light-emitting display apparatus using a light-blocking photoresist layer which minimizes damage to an intermediate layer, including an emission layer, during a process for manufacturing the organic light-emitting display apparatus.
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公开(公告)号:US09608089B2
公开(公告)日:2017-03-28
申请号:US15056033
申请日:2016-02-29
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jongyun Kim , Waljun Kim , Junghyun Kim , Kiwan Ahn
IPC: H01L29/786 , H01L21/336 , H01L27/12 , H01L29/66 , H01L21/266 , H01L21/027 , H01L21/3213
CPC classification number: H01L29/66757 , H01L21/0273 , H01L21/266 , H01L21/32134 , H01L27/1288 , H01L29/78621 , H01L2227/323
Abstract: Provided is a method of manufacturing a thin-film transistor substrate, the method includes forming a semiconductor pattern layer on a substrate. A first insulating film is formed on the semiconductor pattern layer. A metal pattern layer including a gate electrode and first and second alignment electrodes respectively spaced apart from two sides of the gate electrode is formed on the first insulating film. A cover layer covering the gate electrode is formed. The first and second alignment electrodes are removed. A first doping process is performed by doping the semiconductor pattern layer with a first impurity by using the cover layer as a mask. The cover layer is removed. A second doping process is performed by doping the semiconductor pattern layer with a second impurity having a lower impurity concentration than the first impurity by using the gate electrode as a mask.
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