DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20250081728A1

    公开(公告)日:2025-03-06

    申请号:US18620407

    申请日:2024-03-28

    Abstract: A display device includes a substrate, a first transistor including a first bottom gate electrode disposed on the substrate, a first active layer disposed on the first bottom gate electrode and including a first channel region, a first drain region, and a first source region, and a first top gate electrode disposed on a portion of the first active layer including the first channel region, a first insulating layer disposed between the first bottom gate electrode and the first active layer, and a second insulating layer disposed between the first active layer and the first top gate electrode. The second insulating layer includes: a first portion disposed on a portion of the first active layer including the first channel region and having a first thickness and a second portion disposed on a remaining portion of the first active layer and having a second thickness smaller than the first thickness.

    DISPLAY DEVICE
    12.
    发明申请

    公开(公告)号:US20210098561A1

    公开(公告)日:2021-04-01

    申请号:US16885598

    申请日:2020-05-28

    Abstract: A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.

    DISPLAY DEVICE
    13.
    发明申请

    公开(公告)号:US20210056898A1

    公开(公告)日:2021-02-25

    申请号:US16850775

    申请日:2020-04-16

    Abstract: A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.

    THIN FILM TRANSISTOR ARRAY PANEL
    15.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20160365368A1

    公开(公告)日:2016-12-15

    申请号:US14963769

    申请日:2015-12-09

    Abstract: A thin-film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a first self-assembled monolayer disposed on the first gate electrode, a gate insulating layer disposed on the first self-assembled monolayer, a semiconductor disposed on the gate insulating layer, a drain electrode overlapping the semiconductor, the drain electrode being separated from and facing a source electrode with respect to the semiconductor, a first interlayer insulating layer disposed on the source electrode and the drain electrode, a second self-assembled monolayer disposed on the first interlayer insulating layer, a second gate electrode disposed on the second self-assembled monolayer, a second interlayer insulating layer disposed on the second gate electrode, and a pixel electrode disposed on the second interlayer insulating layer and connected to the drain electrode.

    Abstract translation: 薄膜晶体管阵列面板包括基板,设置在基板上的第一栅极电极,设置在第一栅电极上的第一自组装单层,设置在第一自组装单层上的栅极绝缘层,设置在第一自组装单层上的半导体 所述栅极绝缘层,与所述半导体重叠的漏电极,所述漏电极相对于所述半导体分离并面对源电极,设置在所述源电极和所述漏电极上的第一层间绝缘层,第二自组装单层 设置在第一层间绝缘层上的第二栅电极,设置在第二自组装单层上的第二栅电极,设置在第二栅电极上的第二层间绝缘层,以及设置在第二层间绝缘层上并连接到漏极的像素电极 。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210328102A1

    公开(公告)日:2021-10-21

    申请号:US17171451

    申请日:2021-02-09

    Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.

    DISPLAY DEVICE
    17.
    发明申请

    公开(公告)号:US20210036029A1

    公开(公告)日:2021-02-04

    申请号:US16876984

    申请日:2020-05-18

    Abstract: A display device includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including an oxide semiconductor and a first active layer, a first gate insulating layer disposed on the first semiconductor layer and the buffer layer, a second semiconductor layer disposed on the first gate insulating layer and including an oxide semiconductor, a second active layer, and a first oxide layer on the first active layer, a second gate insulating layer disposed on the second semiconductor layer, a first conductive layer disposed on the second gate insulating layer, an insulating layer disposed on the first conductive layer, a second conductive layer disposed on the insulating layer, a passivation layer disposed on the second conductive layer, and a third conductive layer disposed on the first passivation layer.

    DISPLAY DEVICE
    18.
    发明申请

    公开(公告)号:US20210036028A1

    公开(公告)日:2021-02-04

    申请号:US16836651

    申请日:2020-03-31

    Abstract: A display device includes a pixel connected to a scan line, and a data line crossing the scan line, wherein the pixel includes a light-emitting element, a driving transistor configured to control a driving current supplied to the light-emitting element according to a data voltage applied from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal that is applied to the scan line. The driving transistor includes a first active layer including an oxide semiconductor, and a first oxide layer disposed on the first active layer and including an oxide semiconductor. The first switching transistor includes a second active layer including an oxide semiconductor, and the first oxide layer is not disposed on the second active layer.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20200075641A1

    公开(公告)日:2020-03-05

    申请号:US16529516

    申请日:2019-08-01

    Abstract: A display device includes: a substrate including a display area and a non-display area; a gate driver disposed on the substrate in the non-display area and including a plurality of stages that generate a gate signal and output the gate signal to the display area; a switching transistor and a driving transistor disposed on the substrate in the display area; and a light emitting diode connected to the driving transistor, wherein each of the plurality of stages may include a plurality of transistors, wherein a channel layer of the driving transistor includes a first oxide semiconductor material, and a channel layer of the plurality of transistors included in each of the plurality of stages includes a second oxide semiconductor material, wherein the first oxide semiconductor material is different from the second oxide semiconductor material, and wherein the second oxide semiconductor material may include tin.

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