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1.发明申请公开(公告)号：US20210036086A1
公开(公告)日：2021-02-04
申请号：US16880792
申请日：2020-05-21
发明人： Sangwoo SOHN , Myounghwa KIM , TaeSang KIM , Hyungjun KIM , Yeon Keon MOON , Joon Seok PARK , Sangwon SHIN , Jun Hyung LIM , Hyelim CHOI
IPC分类号： H01L27/32 , H01L51/56 , H01L51/52 , H01L29/786
摘要： A display panel includes a base layer, a first thin film transistor on the base layer, a second thin film transistor electrically coupled to the first thin film transistor, and a light emitting element electrically coupled to the second thin film transistor. The first thin film transistor includes a first semiconductor pattern on the base layer, a first barrier pattern on the first semiconductor pattern and including a gallium (Ga) oxide and a zinc (Zn) oxide, and a first control electrode on the first barrier pattern and overlapping the first semiconductor pattern. Accordingly, a signal transmission speed of the display panel may be improved, and electrical characteristics and reliability of the thin film transistor included in the display panel may be improved.
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公开(公告)号：US20210020110A1
公开(公告)日：2021-01-21
申请号：US16846195
申请日：2020-04-10
发明人： Joon Seok PARK , So Young KOO , Myoung Hwa KIM , Eok Su KIM , Tae Sang KIM , Hyung Jun KIM , Yeon Keon MOON , Geun Chul PARK , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC分类号： G09G3/3266 , G09G3/3233 , G09G3/3291 , H01L27/32 , H01L29/786 , H01L29/49
摘要： A display device, includes: a pixel connected to a scan line and a data line crossing the scan line, wherein the pixel includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage received from the data line, and a first switching transistor configured to apply the data voltage of the data line to the driving transistor according to a scan signal applied to the scan line; wherein the driving transistor includes a first active layer including an oxide semiconductor and a first oxide layer on the first active layer and including an oxide semiconductor; and wherein the first switching transistor includes a second active layer on the first active layer and including the same oxide semiconductor as the first oxide layer.
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公开(公告)号：US20190252478A1
公开(公告)日：2019-08-15
申请号：US16254297
申请日：2019-01-22
发明人： Kyoung Seok SON , Jaybum KIM , Yeon Keon MOON , Jun Hyung LIM
IPC分类号： H01L27/32
CPC分类号： H01L27/3262 , H01L27/1251 , H01L27/3246 , H01L27/3248 , H01L27/3258
摘要： An organic light emitting display device includes a substrate, a first semiconductor element, a second semiconductor element, an insulation layer structure, and a light emitting structure. The substrate has a first region and a second region that is adjacent to the first region. The insulation layer structure is disposed between a second gate electrode and a second active layer of the second semiconductor element. The insulation layer structure includes a first insulation layer having a first etching rate, a second insulation layer disposed on the first insulation layer and having a second etching rate that is greater than the first etching rate, and a third insulation layer disposed on the second insulation layer and having a third etching rate that is less than the second etching rate in a same etching process. The light emitting structure is disposed on the insulation layer structure.
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公开(公告)号：US20160300859A1
公开(公告)日：2016-10-13
申请号：US14856405
申请日：2015-09-16
发明人： Yeon Keon MOON , Masataka KANO , So Young KOO , Myoung Hwa KIM , Jun Hyung LIM
IPC分类号： H01L27/12 , H01L29/66 , H01L29/423 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/0705 , H01L27/124 , H01L27/1251 , H01L27/127 , H01L29/42356 , H01L29/42384 , H01L29/66969 , H01L29/78603 , H01L29/78648 , H01L29/7869
摘要： A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor.
摘要翻译： 一种薄膜晶体管显示面板，包括：第一绝缘基板; 布置在第一绝缘基板和第一栅极绝缘层之间的第一半导体; 设置在所述第一栅极绝缘层上的栅电极，所述栅电极与所述第一半导体重叠; 设置在所述栅电极上的第二栅极绝缘层; 布置在第二栅绝缘层上的第二半导体，第二半导体与栅电极重叠; 设置在所述第二半导体上的层间绝缘层; 以及设置在层间绝缘层彼此间隔开的源电极和漏电极，源电极和漏电极连接到第一半导体和第二半导体。
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公开(公告)号：US20210098561A1
公开(公告)日：2021-04-01
申请号：US16885598
申请日：2020-05-28
发明人： Joon Seok PARK , Myounghwa KIM , Tae Sang KIM , Hyungjun KIM , Yeon Keon MOON , Geunchul PARK , Sangwoo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC分类号： H01L27/32
摘要： A display device includes a first pixel, a second pixel, a first data line connected to the first pixel, and a second data line connected to the second pixel. Each of the first pixel and the second pixel includes a transistor including a conductive layer, a semiconductor layer on the conductive layer, a gate electrode on the semiconductor layer, and a source/drain electrode connected to the semiconductor layer, a capacitor including a first capacitor electrode in a same layer as the gate electrode and a second capacitor electrode on the first capacitor electrode, and a light emitting device on the transistor and the capacitor. The first data line is in a same layer as the source/drain electrode, and the second data line is in a same layer as one of the conductive layer and the second capacitor electrode.
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公开(公告)号：US20210056898A1
公开(公告)日：2021-02-25
申请号：US16850775
申请日：2020-04-16
发明人： Joon Seok PARK , Yeon Keon MOON , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC分类号： G09G3/3225 , G09G3/3266 , G09G3/3275 , H01L27/32
摘要： A display device includes a pixel including a light emitting element connected to a scan line and a data line; a driving transistor that controls a driving current supplied to the light emitting element according to a data voltage applied from the data line. The driving transistor includes a first semiconductor layer, and a first gate electrode disposed on the first semiconductor layer. The display device includes a switching transistor that applies the data voltage to the driving transistor according to a scan signal applied to the scan line. The switching transistor includes a second semiconductor layer, and a second gate electrode disposed on the second semiconductor layer. The display device includes a light blocking layer and a first buffer layer disposed at a lower portion of the driving transistor. The light blocking layer and the first buffer layer do not overlap the switching transistor.
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公开(公告)号：US20190312061A1
公开(公告)日：2019-10-10
申请号：US16371433
申请日：2019-04-01
发明人： Kyoung Seok SON , Myounghwa KIM , Jaybum KIM , Yeon Keon MOON , Masataka KANO
摘要： A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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公开(公告)号：US20160365368A1
公开(公告)日：2016-12-15
申请号：US14963769
申请日：2015-12-09
发明人： Masataka KANO , Ji Hun LIM , Yeon Keon MOON , Jun Hyung LIM , So Young KOO , Myoung Hwa KIM
IPC分类号： H01L27/12 , H01L29/788 , H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423
CPC分类号： H01L27/1248 , H01L27/124 , H01L27/1259 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/7869 , H01L29/788
摘要： A thin-film transistor array panel includes a substrate, a first gate electrode disposed on the substrate, a first self-assembled monolayer disposed on the first gate electrode, a gate insulating layer disposed on the first self-assembled monolayer, a semiconductor disposed on the gate insulating layer, a drain electrode overlapping the semiconductor, the drain electrode being separated from and facing a source electrode with respect to the semiconductor, a first interlayer insulating layer disposed on the source electrode and the drain electrode, a second self-assembled monolayer disposed on the first interlayer insulating layer, a second gate electrode disposed on the second self-assembled monolayer, a second interlayer insulating layer disposed on the second gate electrode, and a pixel electrode disposed on the second interlayer insulating layer and connected to the drain electrode.
摘要翻译： 薄膜晶体管阵列面板包括基板，设置在基板上的第一栅极电极，设置在第一栅电极上的第一自组装单层，设置在第一自组装单层上的栅极绝缘层，设置在第一自组装单层上的半导体 所述栅极绝缘层，与所述半导体重叠的漏电极，所述漏电极相对于所述半导体分离并面对源电极，设置在所述源电极和所述漏电极上的第一层间绝缘层，第二自组装单层 设置在第一层间绝缘层上的第二栅电极，设置在第二自组装单层上的第二栅电极，设置在第二栅电极上的第二层间绝缘层，以及设置在第二层间绝缘层上并连接到漏极的像素电极 。
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公开(公告)号：US20220278135A1
公开(公告)日：2022-09-01
申请号：US17745427
申请日：2022-05-16
发明人： Kyoung Seok SON , Myounghwa KIM , Jaybum KIM , Yeon Keon MOON , Masataka KANO
摘要： A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.
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公开(公告)号：US20210327983A1
公开(公告)日：2021-10-21
申请号：US16952762
申请日：2020-11-19
发明人： Myoung Hwa KIM , Joon Seok PARK , Tae Sang KIM , Yeon Keon MOON , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Hye Lim CHOI
IPC分类号： H01L27/32
摘要： A display device is provided. The display device includes a substrate, a first active layer of a first transistor and a second active layer of a second transistor which are disposed on the substrate, a first gate insulating layer disposed on the first active layer, an oxide layer disposed on the first gate insulating layer and including an oxide semiconductor, a first gate electrode disposed on the oxide layer, a second gate insulating layer disposed on the first gate electrode and the second active layer, and a second gate electrode which overlaps the second active layer in a thickness direction of the substrate and is disposed on the second gate insulating layer, where the oxide layer overlaps the first active layer and does not overlap the second active layer in the thickness direction.
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