公开(公告)号：US10199377B2

公开(公告)日：2019-02-05

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20160380052A1

公开(公告)日：2016-12-29

申请号：US15015937

申请日：2016-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JU-YOUN KIM ,  Min-Choul Kim ,  Baik-Min Sung ,  Sang-Hyun Woo

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L21/76224 ,  H01L21/76232 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

Abstract translation: 半导体器件包括从基板突出并沿第一方向延伸的翅片，与翅片相交的第一和第二栅极结构，形成在第一和第二栅极结构之间的翅片中的凹部，填充凹部的器件隔离层和 其具有从所述翅片向外突出并且设置成与所述第一和第二栅极结构的上表面共面的上表面，沿着从所述鳍片向外突出的所述器件隔离层的侧壁形成的衬垫和设置在所述第二栅极结构的源极/漏极区域 在凹槽的两侧并与器件隔离层隔开。