公开(公告)号：US10910373B2

公开(公告)日：2021-02-02

申请号：US16794029

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US10692864B2

公开(公告)日：2020-06-23

申请号：US16233301

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20200185382A1

公开(公告)日：2020-06-11

申请号：US16794029

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNG-GUN YOU ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20190131300A1

公开(公告)日：2019-05-02

申请号：US16233301

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNG-GUN YOU ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US10199377B2

公开(公告)日：2019-02-05

申请号：US15461934

申请日：2017-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L21/762 ,  H01L21/311 ,  H01L21/8234

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.