公开(公告)号：US10157917B2

公开(公告)日：2018-12-18

申请号：US14974805

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.

公开(公告)号：US10692864B2

公开(公告)日：2020-06-23

申请号：US16233301

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20200185382A1

公开(公告)日：2020-06-11

申请号：US16794029

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNG-GUN YOU ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US09614035B2

公开(公告)日：2017-04-04

申请号：US15015937

申请日：2016-02-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Kim ,  Min-Choul Kim ,  Baik-Min Sung ,  Sang-Hyun Woo

IPC: H01L21/70 ,  H01L29/06 ,  H01L29/78 ,  H01L27/092

CPC classification number: H01L21/76224 ,  H01L21/76232 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

公开(公告)号：US10910373B2

公开(公告)日：2021-02-02

申请号：US16794029

申请日：2020-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US10014208B2

公开(公告)日：2018-07-03

申请号：US15444567

申请日：2017-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Kim ,  Min-Choul Kim ,  Baik-Min Sung ,  Sang-Hyun Woo

IPC: H01L27/088 ,  H01L21/762 ,  H01L27/092

CPC classification number: H01L21/76224 ,  H01L21/76232 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a fin protruding from a substrate and extending in a first direction, first and second gate structures intersecting the fin, a recess formed in the fin between the first and second gate structures, a device isolation layer which fills the recess, and which has an upper surface protruded outwardly from the fin and disposed to be coplanar with upper surfaces of the first and second gate structures, a liner formed along a side walls of the device isolation layer protruded outwardly from the fin and a source/drain region disposed at both sides of the recess and spaced apart from the device isolation layer.

公开(公告)号：US09865736B2

公开(公告)日：2018-01-09

申请号：US15292144

申请日：2016-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chong-Kwang Chang ,  Young-Mook Oh ,  Hak-Yoon Ahn ,  Jung-Gun You ,  Gi-Gwan Park ,  Baik-Min Sung

IPC: H01L29/78 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L29/785 ,  H01L21/76807 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53295 ,  H01L2029/7858

Abstract: A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.

公开(公告)号：US20200219875A1

公开(公告)日：2020-07-09

申请号：US16820853

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device -is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US20190131300A1

公开(公告)日：2019-05-02

申请号：US16233301

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNG-GUN YOU ,  Se-wan Park ,  Baik-Min Sung ,  Bo-Cheol Jeong

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

公开(公告)号：US20190081043A1

公开(公告)日：2019-03-14

申请号：US16189296

申请日：2018-11-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.