公开(公告)号：US20210210439A1

公开(公告)日：2021-07-08

申请号：US16995925

申请日：2020-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheolhwan Lim ,  Kwangho Kim ,  Donghun Heo

IPC: H01L23/00 ,  G01J1/44 ,  G06F21/71 ,  G06F21/87

Abstract: A semiconductor device includes a sensing circuit including a first semiconductor element configured to generate a first current in response to externally incident light, a compensation circuit including a semiconductor element configured to generate a second current depending on an ambient temperature and to remove the second current from the first current to generate a third current, a detection circuit configured to convert the third current into a photovoltage and to compare the photovoltage with a predetermined reference voltage to determine whether an external attack has occurred, and a defense circuit configured to control the semiconductor device to perform a predetermined defense operation, based on a result of the determination.

公开(公告)号：US12181512B2

公开(公告)日：2024-12-31

申请号：US17984332

申请日：2022-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghun Heo ,  Himchan Park ,  Cheolhwan Lim

IPC: G01R31/26 ,  G01R19/10 ,  H01L27/06

Abstract: A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.

公开(公告)号：US20220222339A1

公开(公告)日：2022-07-14

申请号：US17470875

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghun Heo ,  Kwangho Kim ,  Junhyeok Yang

IPC: G06F21/55 ,  H03K19/20 ,  G05F1/56

Abstract: A low voltage attack detector includes: a low voltage detector configured to output a low voltage detection flag signal having a high level when a first power supply voltage reaches a first voltage level using a bandgap reference (BGR) circuit including a PMOS transistor and a first bipolar junction transistor (BJT) connected in series between the first power supply voltage and a second power supply voltage; a BGR operation region detector configured to output a malfunction detection flag signal having a high level when the first power supply voltage reaches a second voltage level lower than the first voltage level; and a logic gate configured to output a final low voltage detection flag signal having a high level when at least one of the low voltage detection flag signal and the malfunction detection flag signal has a high level.

公开(公告)号：US20220137104A1

公开(公告)日：2022-05-05

申请号：US17314693

申请日：2021-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghun Heo ,  Sangjin Lim ,  Cheolhwan Lim

IPC: G01R19/165 ,  H03K3/037 ,  H03K5/24 ,  H03K17/687 ,  G06F21/55

Abstract: A glitch detector includes a sensing circuit, a glitch-to-pulse generator and a comparing circuit. The sensing circuit generates a glitch voltage and at least one reference voltage based on a first power supply voltage. The glitch-to-pulse generator receives the first power supply voltage or the glitch voltage, and generates at least one pulse voltage including a pulse when the glitch occurs on the first power supply voltage. The comparing circuit generates at least one detection voltage by comparing the glitch voltage with the at least one reference voltage based on the pulse included in the at least one pulse voltage. The at least one detection voltage is activated when the glitch occurs on the first power supply voltage.