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    Laser detecting circuit and semiconductor apparatus including the same
    1.
    发明授权
    Laser detecting circuit and semiconductor apparatus including the same 有权

    公开(公告)号：US12230588B2

    公开(公告)日：2025-02-18

    申请号：US17860699

    申请日：2022-07-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheolhwan Lim ,  Kwangho Kim ,  Sangjin Lim ,  Haejung Choi ,  Donghun Heo

    IPC: G11C29/12 ,  G01J1/42 ,  H01L23/00 ,  H03K19/003

    Abstract: A laser detecting circuit is provided. The laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. The second inverter includes a plurality of PMOS transistors connected in series between a first source voltage and the first node, and a plurality of NMOS transistors. A gate of each of the plurality of PMOS transistors is connected to the second node, and a drain of each of the plurality of NMOS transistors is connected to the first node. The plurality of NMOS transistors includes dummy NMOS transistors and normal NMOS transistors.

    BUILT-IN SELF-TEST CIRCUIT AND TEMPERATURE MEASUREMENT CIRCUIT INCLUDING THE SAME
    3.
    发明申请
    BUILT-IN SELF-TEST CIRCUIT AND TEMPERATURE MEASUREMENT CIRCUIT INCLUDING THE SAME 有权

    公开(公告)号：US20210199719A1

    公开(公告)日：2021-07-01

    申请号：US16940809

    申请日：2020-07-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

    IPC: G01R31/317 ,  G01R31/28 ,  G01R31/3167 ,  G01R31/319 ,  G01R31/30 ,  G01R31/327 ,  H03K19/017

    Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

    Temperature sensing device and temperature-voltage converter
    4.
    发明授权
    Temperature sensing device and temperature-voltage converter 有权

    公开(公告)号：US10656023B2

    公开(公告)日：2020-05-19

    申请号：US16199097

    申请日：2018-11-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jooseong Kim ,  Kwangho Kim ,  Sangho Kim

    IPC: G01K7/01 ,  G01K7/16

    Abstract: A temperature sensing device includes a temperature-voltage converter that outputs a first voltage, having a zero temperature coefficient that does not vary with a temperature, and a second voltage having a negative temperature coefficient varying in inverse proportion to the temperature. A multiplexer alternately outputs the first voltage and the second voltage depending on a transition signal. A temperature sensor alternately receives the first voltage and the second voltage and senses the temperature depending on a ratio of the first voltage and the second voltage.

    BUILT-IN SELF-TEST CIRCUIT AND TEMPERATURE MEASUREMENT CIRCUIT INCLUDING THE SAME
    5.
    发明申请
    BUILT-IN SELF-TEST CIRCUIT AND TEMPERATURE MEASUREMENT CIRCUIT INCLUDING THE SAME 有权

    公开(公告)号：US20250076377A1

    公开(公告)日：2025-03-06

    申请号：US18954320

    申请日：2024-11-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junhee Shin ,  Jooseong Kim ,  Yongjin Lee ,  Michael Choi ,  Kwangho Kim ,  Sangho Kim

    IPC: G01R31/317 ,  G01R31/28 ,  G01R31/30 ,  G01R31/3167 ,  G01R31/319 ,  G01R31/327 ,  H03K19/017

    Abstract: A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

    DEFENSE CIRCUIT OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    7.
    发明申请
    DEFENSE CIRCUIT OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210210439A1

    公开(公告)日：2021-07-08

    申请号：US16995925

    申请日：2020-08-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Cheolhwan Lim ,  Kwangho Kim ,  Donghun Heo

    IPC: H01L23/00 ,  G01J1/44 ,  G06F21/71 ,  G06F21/87

    Abstract: A semiconductor device includes a sensing circuit including a first semiconductor element configured to generate a first current in response to externally incident light, a compensation circuit including a semiconductor element configured to generate a second current depending on an ambient temperature and to remove the second current from the first current to generate a third current, a detection circuit configured to convert the third current into a photovoltage and to compare the photovoltage with a predetermined reference voltage to determine whether an external attack has occurred, and a defense circuit configured to control the semiconductor device to perform a predetermined defense operation, based on a result of the determination.

    LOW VOLTAGE ATTACK DETECTOR, SECURE ELEMENT AND ELECTRONIC SYSTEM INCLUDING THE SAME
    10.
    发明申请
    LOW VOLTAGE ATTACK DETECTOR, SECURE ELEMENT AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220222339A1

    公开(公告)日：2022-07-14

    申请号：US17470875

    申请日：2021-09-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Donghun Heo ,  Kwangho Kim ,  Junhyeok Yang

    IPC: G06F21/55 ,  H03K19/20 ,  G05F1/56

    Abstract: A low voltage attack detector includes: a low voltage detector configured to output a low voltage detection flag signal having a high level when a first power supply voltage reaches a first voltage level using a bandgap reference (BGR) circuit including a PMOS transistor and a first bipolar junction transistor (BJT) connected in series between the first power supply voltage and a second power supply voltage; a BGR operation region detector configured to output a malfunction detection flag signal having a high level when the first power supply voltage reaches a second voltage level lower than the first voltage level; and a logic gate configured to output a final low voltage detection flag signal having a high level when at least one of the low voltage detection flag signal and the malfunction detection flag signal has a high level.

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