公开(公告)号：US20200165142A1

公开(公告)日：2020-05-28

申请号：US16409096

申请日：2019-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doh Won JUNG ,  Chan KWAK ,  Euncheol DO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Taewon JEONG ,  Giyoung JO

IPC: C01G35/00 ,  H01G4/10 ,  H01L49/02

Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

公开(公告)号：US20230162917A1

公开(公告)日：2023-05-25

申请号：US17750742

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/00

CPC classification number: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/006 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2002/72

Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:


K1+xNaSr4-2xLaxNb10O30,  Formula 1

wherein, in Formula 1, 0

公开(公告)号：US20220415577A1

公开(公告)日：2022-12-29

申请号：US17521296

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  H01L49/02

Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.

公开(公告)号：US20220123102A1

公开(公告)日：2022-04-21

申请号：US17344672

申请日：2021-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeoncheol PARK ,  Daejin YANG ,  Dohwon JUNG ,  Taewon JEONG

IPC: H01L49/02 ,  H01L27/108 ,  H01B3/12 ,  H01G4/12

Abstract: The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1: (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0

公开(公告)号：US20210122644A1

公开(公告)日：2021-04-29

申请号：US16819571

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Hyungjun KIM ,  Euncheol DO ,  Hyeoncheol PARK ,  Changsoo LEE

IPC: C01G33/00 ,  H01L27/108 ,  H01L49/02

Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.