公开(公告)号：US20220005647A1

公开(公告)日：2022-01-06

申请号：US17153371

申请日：2021-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Giyoung JO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG

IPC: H01G4/08

Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

公开(公告)号：US20190189345A1

公开(公告)日：2019-06-20

申请号：US16100285

申请日：2018-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Seok MOON ,  Hyeon Cheol PARK ,  Chan KWAK ,  Hyun Sik KIM ,  Daejin YANG ,  Youngjin CHO

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/008

CPC classification number: H01G4/1227 ,  H01G4/008 ,  H01G4/30

Abstract: A ceramic dielectric includes a plurality of semi-conductive grains including a semiconductor oxide including barium (Ba), titanium (Ti), and a rare earth element. A ceramic dielectric also includes an insulative oxide located between adjacent semiconductor grains and an acceptor element including manganese (Mn), magnesium (Mg), aluminum (Al), iron (Fe), scandium (Sc), gallium (Ga), or a combination thereof, a method of manufacturing the ceramic dielectric, and a ceramic electronic component, and an electronic device including the ceramic dielectric.

公开(公告)号：US20190131075A1

公开(公告)日：2019-05-02

申请号：US16169800

申请日：2018-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Hyeon Cheol PARK ,  Takayoshi SASAKI ,  Minoru OSADA ,  Chan KWAK ,  Daejin YANG ,  Doh Won JUNG ,  Youngjin CHO

IPC: H01G4/30 ,  H01G4/12 ,  H01G4/005

Abstract: A ceramic electronic component includes a pair of electrodes facing each other and a dielectric layer disposed between the pair of electrodes and including a plurality of ceramic nanosheets, where the plurality of ceramic nanosheets has a multimodal lateral size distribution expressed by at least two separated peaks, a method of manufacturing the same, and an electronic device including the ceramic electronic component.

公开(公告)号：US20160192483A1

公开(公告)日：2016-06-30

申请号：US14918711

申请日：2015-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weonho SHIN ,  Yun Sung WOO ,  Daejin YANG ,  Jinyoung HWANG ,  Chan KWAK ,  Hyeon Cheol PARK ,  Jae-Young CHOI

IPC: H05K1/09

CPC classification number: H05K1/09 ,  B82Y30/00 ,  H05K1/095 ,  H05K2201/0108 ,  H05K2201/0257 ,  H05K2201/026 ,  H05K2201/0326

Abstract: A transparent electrode includes: a substrate; an electrically conductive layer disposed on the substrate and including a plurality of nano-sized conductors; and an organic/inorganic composite layer directly disposed on the electrically conductive layer and including a cross-linked polymer and nano-sized inorganic oxide particles, wherein the nano-sized inorganic oxide particles are included in an amount of greater than or equal to about 1 part by weight and less than about 35 parts by weight, relative to 100 parts by weight of the cross-linked polymer. Also an electronic device including the same.

Abstract translation: 透明电极包括：基板; 导电层，其设置在所述基板上并且包括多个纳米尺寸的导体; 以及直接设置在导电层上并包含交联聚合物和纳米级无机氧化物颗粒的有机/无机复合层，其中纳米尺寸无机氧化物颗粒的含量大于或等于约1 相对于100重量份的交联聚合物，重量份小于约35重量份。 也是包括其的电子设备。

公开(公告)号：US20220028613A1

公开(公告)日：2022-01-27

申请号：US17165300

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  G11C11/22 ,  H01L27/11502 ,  H01L49/02 ,  C04B35/497

Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material: (1−x)KaNabNbO3.xM(AcSbd)O3  [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0

公开(公告)号：US20200165142A1

公开(公告)日：2020-05-28

申请号：US16409096

申请日：2019-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doh Won JUNG ,  Chan KWAK ,  Euncheol DO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Taewon JEONG ,  Giyoung JO

IPC: C01G35/00 ,  H01G4/10 ,  H01L49/02

Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

公开(公告)号：US20190304685A1

公开(公告)日：2019-10-03

申请号：US16033392

申请日：2018-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Sik KIM ,  Yoon Chul SON ,  Kyoung-Seok MOON ,  Daejin YANG ,  Chan KWAK

IPC: H01G4/12 ,  H01G4/30 ,  C04B35/47 ,  C04B35/63 ,  C04B35/626 ,  C04B35/64

Abstract: Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO3, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.

公开(公告)号：US20180257991A1

公开(公告)日：2018-09-13

申请号：US15908193

申请日：2018-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Wook ROH ,  Daejin YANG ,  Doh Won JUNG ,  Chan KWAK ,  Hyungjun KIM

IPC: C04B35/491 ,  C04B35/468 ,  C04B35/47 ,  C04B35/472 ,  C01G41/00 ,  C01G41/02 ,  C01G29/00 ,  C01G35/00 ,  C07C211/63 ,  C07C211/01

CPC classification number: C04B35/491 ,  C01G29/00 ,  C01G29/006 ,  C01G35/00 ,  C01G35/006 ,  C01G41/006 ,  C01G41/02 ,  C01P2002/22 ,  C01P2004/03 ,  C01P2004/24 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/47 ,  C04B35/472 ,  C04B35/475 ,  C04B35/495 ,  C04B2235/3251 ,  C04B2235/3258 ,  C04B2235/3298 ,  C04B2235/5292 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/85 ,  C07C211/01 ,  C07C211/63 ,  H01C7/008 ,  H01C7/115 ,  H01G4/10 ,  H01G4/1227

Abstract: A dielectric material, a method of manufacturing thereof, and a dielectric device and an electronic device including the same. A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of the monolayer nanosheets, or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure and the two-dimensional layered material is represented by Chemical Formula 1.

公开(公告)号：US20170113443A1

公开(公告)日：2017-04-27

申请号：US15296313

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daejin YANG ,  Weonho SHIN ,  Yun Sung WOO ,  Hyeon Cheol PARK

IPC: B32B27/06 ,  B32B27/36 ,  B32B27/28 ,  B32B17/10

Abstract: A conductive film including: a substrate; an electrically conductive layer disposed on the substrate, wherein the electrically conductive layer includes a plurality of nano-sized conductors; and a protective layer disposed directly on the electrically conductive layer, wherein the protective layer includes a crosslinked polymer having a perfluorinated backbone.

公开(公告)号：US20230154679A1

公开(公告)日：2023-05-18

申请号：US17858552

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Taewon JEONG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  C01G33/00

CPC classification number: H01G4/10 ,  C01G33/006 ,  H01G4/30 ,  C01P2002/34 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2006/32 ,  C01P2006/40

Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about -15% to about 15% in a range of about -55° C. to about +200° C.