公开(公告)号：US20220028613A1

公开(公告)日：2022-01-27

申请号：US17165300

申请日：2021-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  G11C11/22 ,  H01L27/11502 ,  H01L49/02 ,  C04B35/497

Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material: (1−x)KaNabNbO3.xM(AcSbd)O3  [Formula 1] wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0

公开(公告)号：US20200165142A1

公开(公告)日：2020-05-28

申请号：US16409096

申请日：2019-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doh Won JUNG ,  Chan KWAK ,  Euncheol DO ,  Hyeon Cheol PARK ,  Daejin YANG ,  Taewon JEONG ,  Giyoung JO

IPC: C01G35/00 ,  H01G4/10 ,  H01L49/02

Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.

公开(公告)号：US20170113443A1

公开(公告)日：2017-04-27

申请号：US15296313

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daejin YANG ,  Weonho SHIN ,  Yun Sung WOO ,  Hyeon Cheol PARK

IPC: B32B27/06 ,  B32B27/36 ,  B32B27/28 ,  B32B17/10

Abstract: A conductive film including: a substrate; an electrically conductive layer disposed on the substrate, wherein the electrically conductive layer includes a plurality of nano-sized conductors; and a protective layer disposed directly on the electrically conductive layer, wherein the protective layer includes a crosslinked polymer having a perfluorinated backbone.

公开(公告)号：US20130136666A1

公开(公告)日：2013-05-30

申请号：US13685132

申请日：2012-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Kwang Hee KIM ,  Byung Ki RYU ,  Jae Ho LEE

IPC: B01D71/02 ,  B01J8/02

CPC classification number: B01D71/022 ,  B01D53/228 ,  B01J8/02 ,  C01B3/503 ,  C01B3/505

Abstract: A separation membrane including an alloy including a Group 5 element and Ir, wherein the alloy includes a body centered cubic crystal structure.

Abstract translation: 一种分离膜，其包括含有第5族元素和Ir的合金，其中所述合金包括体心立方晶体结构。

公开(公告)号：US20230162917A1

公开(公告)日：2023-05-25

申请号：US17750742

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/00

CPC classification number: H01G4/10 ,  H01G4/30 ,  H01G4/008 ,  C01G33/006 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2002/72

Abstract: A dielectric material, a device including the same, and a method of preparing the dielectric material are provided. The dielectric material may include a compound represented by the following Formula 1:


K1+xNaSr4-2xLaxNb10O30,  Formula 1

wherein, in Formula 1, 0

公开(公告)号：US20220415577A1

公开(公告)日：2022-12-29

申请号：US17521296

申请日：2021-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taewon JEONG ,  Hyeon Cheol PARK ,  Daejin YANG ,  Doh Won JUNG ,  Giyoung JO

IPC: H01G4/12 ,  H01L49/02

Abstract: Provided are a dielectric material and a device including the dielectric material. The dielectric material includes (K0.5Na0.5)NbO3 and (K0.5A0.5)TiO3, wherein A is a trivalent element having 3 valence electrons, in a solid solution; and the device includes a plurality of electrodes; and at least one dielectric layer between the plurality of electrodes, wherein the dielectric layers include the dielectric material.

公开(公告)号：US20180204679A1

公开(公告)日：2018-07-19

申请号：US15875386

申请日：2018-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan KWAK ,  Hyun Sik KIM ,  Jong Wook ROH ,  Kyoung-Seok MOON ,  Hyeon Cheol PARK ,  Yoon Chul SON ,  Daejin YANG ,  Doh Won JUNG ,  Youngjin CHO

IPC: H01G4/30 ,  H01G4/14

CPC classification number: H01G4/30 ,  C04B35/47 ,  C04B35/62805 ,  C04B35/62815 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/781 ,  C04B2235/79 ,  C04B2235/85 ,  C04B2237/346 ,  C04B2237/68 ,  H01C7/008 ,  H01C7/1006 ,  H01C7/18 ,  H01C17/06533 ,  H01G4/1218 ,  H01G4/1227 ,  H01G4/1236 ,  H01G4/1245 ,  H01G4/14 ,  H01G4/232 ,  H01G4/248

Abstract: A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

公开(公告)号：US20150225239A1

公开(公告)日：2015-08-13

申请号：US14610783

申请日：2015-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kimoon LEE ,  Byungki RYU ,  Yoon Chul SON ,  Hyeon Cheol PARK ,  Sang Mock LEE

IPC: C01B25/14 ,  H01B1/10 ,  C01B19/00 ,  H01B1/06

CPC classification number: C01B25/14 ,  C01B19/002 ,  C01B19/007 ,  C01G27/006 ,  C01G28/002 ,  C01G29/006 ,  C01G30/002 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  H01B1/02 ,  H01B1/06 ,  H01B1/10

Abstract: A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1. Hf3Te2-xAx  [Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0

Abstract translation: 铪碲化合物包括层状晶体结构并由以下化学式1表示。Hf 3 Te 2-x A x [化学式1]这里，A是选自磷（P），砷（As），锑（Sb）， 铋（Bi），硫（S）和硒（Se）和0

公开(公告)号：US20150187451A1

公开(公告)日：2015-07-02

申请号：US14488999

申请日：2014-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon Cheol PARK ,  Kwang Hee KIM ,  Chan KWAK ,  Yoon Chul SON ,  Sang Mock LEE

IPC: H01B1/02 ,  H01B13/00 ,  C23C14/00

CPC classification number: C23C14/0036 ,  C23C14/024 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/086 ,  G06F3/041 ,  G06F2203/04103 ,  H01B1/00 ,  H01B1/08 ,  H01L31/022466 ,  Y10T428/265

Abstract: Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.

Abstract translation: 公开了一种复合透明电极及其制造方法及包括该复合透明电极的电子器件，其中复合透明电极包括含有铟（In），钛（Ti），锌（Zn）等）中的至少一种的金属氮化物薄膜， ，锆（Zr）和镓（Ga）以及包含铟（In），锌（Zn），锡（Sn）和钛（Ti）中的至少一种的金属氧化物薄膜） 形成在金属氮化物薄膜的一个表面或相对表面上。

公开(公告)号：US20130206002A1

公开(公告)日：2013-08-15

申请号：US13767971

申请日：2013-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Cheol PARK ,  Kwang Hee KIM ,  Byung Ki RYU ,  Jae Ho LEE

IPC: B01D53/22 ,  B21H7/00

CPC classification number: B01D53/228 ,  B01D71/022 ,  B01D2256/16 ,  B01D2325/02 ,  B21H7/00 ,  C01B3/503 ,  C01B2203/0405

Abstract: A separation membrane including an alloy wherein the alloy includes at least one Group 5 element and at least one Group 14 element, wherein the at least one Group 5 element and the at least one Group 14 element of the alloy define a body centered cubic structure.

Abstract translation: 包括合金的分离膜，其中所述合金包括至少一种第5族元素和至少一种第14族元素，其中所述合金的至少一种第5族元素和至少一种第14族元素定义为体心立方结构。