公开(公告)号：US20140152936A1

公开(公告)日：2014-06-05

申请号：US14093153

申请日：2013-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang KIM ,  Sun-jae KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Jong-baek SEON ,  Kyoung-seok SON

IPC: H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract translation: 根据示例性实施例，半导体材料可以包括锌，氮和氟。 半导体材料还可以包括氧。 半导体材料可以包括化合物。 例如，半导体材料可以包括氟氧化氮锌。 半导体材料可以包含含氟的氮氧化锌。 半导体材料可以包括氟化氮锌。 半导体材料可以作为薄膜晶体管（TFT）的沟道材料施加。

公开(公告)号：US20140151690A1

公开(公告)日：2014-06-05

申请号：US14093121

申请日：2013-11-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-sang KIM ,  Sun-jae KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Jong-baek SEON ,  Kyoung-seok SON

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

公开(公告)号：US20130306966A1

公开(公告)日：2013-11-21

申请号：US13721635

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-baek SEON ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Kyoung-seok SON ,  Sang-yoon LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/2206 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.

Abstract translation: 具有硫掺杂的氮氧化锌通道层的晶体管及其制造方法包括相对于约0.1at％至约1.2at％的锌含量的硫含量比的ZnON沟道层，源电极和漏极 分别形成在沟道层的第一区域和第二区域上的电极，对应于沟道层的栅电极以及沟道层和栅电极之间的栅极绝缘层。