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    TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS
    4.
    发明申请
    TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICES INCLUDING THE TRANSISTORS 审中-公开
    晶体管，其制造方法以及包括晶体管的电子器件

    公开(公告)号：US20150060990A1

    公开(公告)日：2015-03-05

    申请号：US14206025

    申请日：2014-03-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sun-jae KIM ,  Tae-sang KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Seok-jun SEO ,  Kyoung-seok SON ,  Seong-ho CHO

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

    CPC classification number: H01L29/7869 ,  H01L29/1033 ,  H01L29/66969 ,  H01L29/78696

    Abstract: Provided are transistors, methods of manufacturing the same, and electronic devices including the transistors. A transistor includes a channel layer having a multi-layer structure having first and second layers, the first and second semiconductor layers including a plurality of elements having respective concentrations, and the first layer is disposed closer to a gate than the second layer. The second layer has a higher electrical resistance than the first layer as a result of a combination of the elements and of their respective concentrations. At least one of the first and second layers includes a semiconductor material including zinc, oxygen, and nitrogen. One of the first and second layers includes a semiconductor material including zinc fluoronitride. An oxygen content of the second layer is higher than an oxygen content of the first layer. A fluorine content of the second layer is higher than a fluorine content of the first layer.

    Abstract translation: 提供了晶体管，其制造方法和包括晶体管的电子器件。 晶体管包括具有第一和第二层的多层结构的沟道层，第一和第二半导体层包括具有各自浓度的多个元件，第一层被设置成比第二层更靠近栅极。 由于元素和它们各自的浓度的组合，第二层具有比第一层更高的电阻。 第一层和第二层中的至少一层包括包含锌，氧和氮的半导体材料。 第一层和第二层之一包括包含氟化氮锌的半导体材料。 第二层的氧含量高于第一层的氧含量。 第二层的氟含量高于第一层的氟含量。

    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    5.
    发明申请
    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS 有权
    晶体管，制造晶体管的方法和包括晶体管的电子器件

    公开(公告)号：US20140159035A1

    公开(公告)日：2014-06-12

    申请号：US14016599

    申请日：2013-09-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joon-seok PARK ,  Sun-jae KIM ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Seok-jun SEO ,  Jong-baek SEON ,  Kyoung-seok SON ,  Sang-yoon LEE

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

    Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

    Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

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