中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.017 seconds)

    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS
    6.
    发明申请
    TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS 有权
    晶体管，制造晶体管的方法和包括晶体管的电子器件

    公开(公告)号：US20140159035A1

    公开(公告)日：2014-06-12

    申请号：US14016599

    申请日：2013-09-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Joon-seok PARK ,  Sun-jae KIM ,  Tae-sang KIM ,  Hyun-suk KIM ,  Myung-kwan RYU ,  Seok-jun SEO ,  Jong-baek SEON ,  Kyoung-seok SON ,  Sang-yoon LEE

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

    Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

    Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

    DISPLAY DEVICE AND DISPLAYING METHOD
    8.
    发明申请
    DISPLAY DEVICE AND DISPLAYING METHOD 审中-公开

    公开(公告)号：US20190340983A1

    公开(公告)日：2019-11-07

    申请号：US16512519

    申请日：2019-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-won SON ,  Dae-bong LEE ,  Ki-suk KIM ,  Soo-hong KIM ,  Jong-ho KIM ,  Hyun-suk KIM ,  Shin-woo CHOI

    IPC: G09G3/34 ,  G09G3/00 ,  G09G3/36 ,  G06T15/50

    Abstract: A display device is disclosed. The display device includes a display including a backlight comprising a plurality of light sources and a display panel and configured to display a background image including a preset object, a sensor disposed at an outer part of the display and configured to sense an external lighting environment and a processor configured to determine a direction of a lighting based on the sensed lighting environment, to display a shadow object for the preset object at a position corresponding to the determined lighting direction, and to adjust a brightness of a light source corresponding to a position of the shadow object from among the plurality of light sources based on the sensed lighting environment.

    ELECTRONIC APPARATUS AND INTERACTION METHOD FOR THE SAME
    9.
    发明申请
    ELECTRONIC APPARATUS AND INTERACTION METHOD FOR THE SAME 审中-公开
    电子设备及其相互交织方法

    公开(公告)号：US20160124633A1

    公开(公告)日：2016-05-05

    申请号：US14932376

    申请日：2015-11-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun-kyung KIM ,  Min-kyoung YOON ,  Ji-yeon KWAK ,  Ji-hyun KIM ,  Hyun-suk KIM

    IPC: G06F3/0488 ,  G06F3/0484 ,  G06F3/0482 ,  G06F1/16 ,  G06F3/041 ,  G06F3/0485

    CPC classification number: G06F3/04883 ,  G06F1/163 ,  G06F1/1643 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/04886

    Abstract: An electronic apparatus is provided. The electronic apparatus includes a touch screen configured to display content and to sense a user input that is input to the touch screen, a bezel part housing the touch screen, a touch sensing unit configured to sense a user input that is input to the bezel part, and a control unit configured to select one character from a first set of characters based on a first user input when receiving the first user input starting at the bezel part and ending at the touch screen, and to select one character from a second set of characters based on a second user input when receiving the second user input from the touch screen.

    Abstract translation: 提供电子设备。 该电子设备包括触摸屏，被配置为显示内容并感测输入到触摸屏的用户输入，容纳触摸屏的边框部分，触摸感测单元，其被配置为感测输入到边框部分的用户输入 以及控制单元，被配置为当从所述边框部分开始并且在所述触摸屏幕处结束时从基于所述第一用户输入的第一用户输入中选择一个字符，并且从第二组中选择一个字符 当从触摸屏接收到第二用户输入时，基于第二用户输入的字符。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20150034942A1

    公开(公告)日：2015-02-05

    申请号：US14162873

    申请日：2014-01-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-suk KIM ,  Sun-jae KIM ,  Tae-sang KIM ,  Myung-kwan RYU ,  Joon-seok PARK ,  Kyoung-seok SON

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/78696

    Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

    Abstract translation: 根据示例性实施例，薄膜晶体管（TFT）包括包括锌，氮和氧的沟道层; 沟道层上的蚀刻停止层; 源极和漏极分别接触沟道层的两端; 对应于沟道层的栅电极; 以及沟道层和栅电极之间的栅极绝缘层。 蚀刻停止层包括氟。 沟道层可以在栅电极上。

Patent Agency Ranking