公开(公告)号：US20210333701A1

公开(公告)日：2021-10-28

申请号：US16952844

申请日：2020-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doogyu LEE ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus for improving an overlay error in a EUV exposure process, and an overlay correction method and a semiconductor device fabricating method using the exposure apparatus. The EUV exposure apparatus includes an EUV light source; a first optical system configured to emit EUV light from the EUV light source to an EUV mask; a second optical system configured to emit EUV light reflected from the EUV mask to a wafer; a mask stage; a wafer stage; and a control unit configured to control the mask stage and the wafer stage, wherein, based on a correlation between a first overlay parameter, which is one of parameters of overlay errors between layers on the wafer, and a second overlay parameter, which is another parameter, the first overlay parameter is corrected through correction of the second overlay parameter.

公开(公告)号：US20210116803A1

公开(公告)日：2021-04-22

申请号：US16886237

申请日：2020-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Yong JUNG ,  Jinsun KIM ,  Seungyoon LEE ,  Jeongjin LEE ,  Chan HWANG

IPC: G03F1/70 ,  G03F1/36 ,  H01L21/66 ,  H01L21/027 ,  G03F7/20

Abstract: An overlay correction method may include obtaining a first central line of a lower pattern on a substrate, forming a photoresist pattern on the lower pattern, obtaining an ADI overlay value corresponding to a first distance between a second central line of an upper flat surface of the lower pattern and a third central line of the photoresist pattern, obtaining an asymmetrical overlay value corresponding to a second distance between the first and second central lines, form an upper pattern using the photoresist pattern, obtaining an ACI overlay value corresponding to a third distance between the first central line and a fourth central line of the upper pattern, subtracting the ADI overlay value from the ACI overlay value to obtain a first overlay skew value, and adding the asymmetrical overlay value to the first overlay skew value to obtain a second overlay skew value.

公开(公告)号：US20180032195A1

公开(公告)日：2018-02-01

申请号：US15662671

申请日：2017-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin LEE ,  Sungjun LEE ,  Hyelin LEE ,  Seungmin CHUNG ,  Youngho CHO ,  Mooyoung KIM

IPC: G06F3/041 ,  G06F3/044

Abstract: A method of processing touch events and an electronic device adapted to the method are provided. The electronic device includes: a touch screen; a processor electrically connected to the touch screen; a touch control circuit, electrically connected to the touch screen and the processor, the touch control circuit configured to create a touch event in response to a touch input detected on the touch screen; and a memory electrically connected to the processor. The processor is configured to execute at least one application stored in the memory, to determine attribute information of the executed application, to generate touch area information containing an attribute corresponding to at least part of the area of the touch screen and information regarding at least part of the area of the touch screen, based on the attribute information, and to provide the touch area information to the touch control circuit. The touch control circuit determines whether a touch event corresponding to the detected touch input is created, based on the touch area information.