公开(公告)号：US20130146890A1

公开(公告)日：2013-06-13

申请号：US13707162

申请日：2012-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-jun HWANG ,  Jae-joon OH ,  Jae-won LEE ,  Hyo-ji CHOI ,  Jong-bong HA

IPC: H01L27/06 ,  H01L29/778

CPC classification number: H01L27/0629 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a reverse diode gate structure on the second semiconductor layer. A source and a drain may be on at least one of the first semiconductor layer and the second semiconductor layer. A gate electrode may be on the reverse diode gate structure.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括第一半导体层，第一半导体层上的第二半导体层和第二半导体层上的反向二极管栅极结构。 源极和漏极可以在第一半导体层和第二半导体层中的至少一个上。 栅电极可以在反向二极管栅极结构上。

公开(公告)号：US20140240026A1

公开(公告)日：2014-08-28

申请号：US14106991

申请日：2013-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-kyu HWANG ,  Woo-chul JEON ,  Joon-yong KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Jong-bong HA

IPC: H03K17/30

CPC classification number: H03K17/063 ,  G01N27/025 ,  G01N27/08 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7787

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract translation: 根据示例性实施例，用于控制施加到高电子迁移率晶体管（HEMT）的栅电极的栅极电压的方法可以包括测量HEMT的漏电极和源电极之间的电压，并且调节栅极的电平 根据测量的电压施加到HEMT的栅电极的电压。 如果漏电极和源电极之间的电压不同于设定值，则可以调节栅电极的电平。

公开(公告)号：US20140061725A1

公开(公告)日：2014-03-06

申请号：US13754047

申请日：2013-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-yeol PARK ,  Woo-chul JEON ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jong-bong HA ,  Sun-kyu HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1033 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

Abstract translation: 根据示例实施例，较高电子迁移率晶体管（HEMT）可以包括第一沟道层，第一沟道层上的第二沟道层，第二沟道层上的沟道电源，与第一沟道层间隔开的漏极， 与第一沟道层接触并与第二沟道层和沟道供给层中的至少一个接触的源电极以及源电极和漏电极之间的栅电极单元。 栅电极单元可以具有常关结构。 第一和第二沟道层彼此形成PN结。 漏电极接触第二沟道层和沟道供应层中的至少一个。