公开(公告)号：US20250081639A1

公开(公告)日：2025-03-06

申请号：US18950847

申请日：2024-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20240213283A1

公开(公告)日：2024-06-27

申请号：US18596322

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14605 ,  H01L27/14627

Abstract: An image sensor may include a pixel isolation structure disposed in a semiconductor substrate to define a first pixel region, first and second photoelectric conversion regions disposed in the first pixel region, and a separation structure disposed in the first pixel region, between the first and second photoelectric conversion regions. The pixel isolation structure may include first pixel isolation portions, which are spaced apart from each other in a second direction and extend lengthwise in a first direction, and second pixel isolation portions, which are spaced apart from each other in the first direction and extend lengthwise in the second direction to connect to the first pixel isolation portions. The separation structure may be spaced apart from the pixel isolation structure in the first direction and the second direction, and is at least partly at the same level as the first and second photoelectric conversion regions in a third direction perpendicular to the first direction and the second direction.

公开(公告)号：US20220359585A1

公开(公告)日：2022-11-10

申请号：US17675145

申请日：2022-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE ,  DOOSIK SEOL ,  TAESUB JUNG

IPC: H01L27/146

Abstract: Provided is an image sensor including a semiconductor substrate having first and second surfaces disposed opposite to the first surface, a pixel separation structure disposed in the semiconductor substrate and defining and surrounding a pixel region, first and second photoelectric conversion regions disposed in the semiconductor substrate on the pixel region, a first transfer gate electrode disposed on the first surface of the semiconductor substrate and between the first photoelectric conversion region and a first floating diffusion region, a second transfer gate electrode disposed on the first surface of the semiconductor substrate and between the second photoelectric conversion region and a second floating diffusion region, a pixel gate electrode disposed on the first surface of the semiconductor substrate and overlapping one of the first and second photoelectric conversion regions, and impurity regions disposed on opposite sides of the pixel gate electrode.

公开(公告)号：US20220337771A1

公开(公告)日：2022-10-20

申请号：US17565591

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG BIN YUN ,  KYUNGHO LEE ,  EUN SUB SHIM ,  TAESUB JUNG

IPC: H04N5/369 ,  H04N5/3745

Abstract: A camera module includes pixels each including first to fourth sub-pixels, a row driver connected to the pixels through row lines, an analog-to-digital conversion circuit connected to the pixels through column lines and converting signals of the column lines into digital values, and a logic circuit. Each of the first to fourth sub-pixels includes a first region and a second region. Each of the first and second regions includes a photo detector. In response to the row driver activating signals of half or less of the photo detectors included in one pixel among the pixels, the analog-to-digital conversion circuit generates a first signal. The logic circuit generates an auto focus signal based on the first signal.

公开(公告)号：US20220216250A1

公开(公告)日：2022-07-07

申请号：US17491705

申请日：2021-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEUNGJOON LEE ,  JUNG BIN YUN ,  KYUNGHO LEE ,  JIHUN KIM ,  JUNGHYUNG PYO

IPC: H01L27/146

Abstract: Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

公开(公告)号：US20220173139A1

公开(公告)日：2022-06-02

申请号：US17443791

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGDUCK LEE ,  SEUNGKI BAEK ,  KYUNGHO LEE ,  HYUNCHEOL KIM ,  DOOSIK SEOL ,  TAESUB JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes: (1) a substrate having first and second surfaces opposing each other in a first direction and a plurality of unit pixels, (2) first and second photodiodes disposed in the substrate in each of the plurality of unit pixels and isolated from each other in a second direction perpendicular to the first direction, (3) a first device isolation film disposed between the plurality of unit pixels, and (4) a pixel internal isolation film disposed in at least one of the plurality of unit pixels. A second device isolation film overlaps at least one of the first and second photodiodes in the first direction. A pair of third device isolation films: (a) extend from the first device isolation film into the unit pixel in a third direction perpendicular to the first direction and the second direction and (b) oppose each other.

公开(公告)号：US20220109012A1

公开(公告)日：2022-04-07

申请号：US17345284

申请日：2021-06-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGHYUCK MOON ,  KYUNGHO LEE ,  SEUNGJOON LEE ,  MINJI JUNG ,  MASATO FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a sensing area, a floating diffusion region arranged in the sensing area, a plurality of photodiodes arranged around the floating diffusion region in the sensing area, and an inter-pixel overflow (IPO) barrier in contact with each of the plurality of photodiodes, the IPO barrier overlapping the floating diffusion region in a vertical direction at a position vertically spaced apart from the floating diffusion region within the sensing area.

公开(公告)号：US20210183920A1

公开(公告)日：2021-06-17

申请号：US16997351

申请日：2020-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYUNGHO LEE ,  BUMSUK KIM ,  EUN SUB SHIM

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface with a pixel region having photoelectric conversion regions, a gate electrode disposed on the pixel region and adjacent to the first surface, a first isolation structure extending from the first surface toward the second surface, the first isolation structure comprising a first pixel isolation pattern enclosing the pixel region, and a first inner isolation pattern spaced apart from the first pixel isolation pattern and positioned between the photoelectric conversion regions, and a second isolation structure extending from the second surface toward the first surface with a top surface vertically spaced apart from at least a portion of a bottom surface of the first isolation structure. The bottom surface of the first isolation structure is closer to the second surface of the semiconductor substrate than to the first surface thereof.

公开(公告)号：US20200344433A1

公开(公告)日：2020-10-29

申请号：US16745909

申请日：2020-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  KYUNGHO LEE

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

公开(公告)号：US20200243579A1

公开(公告)日：2020-07-30

申请号：US16699150

申请日：2019-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHYUNG PYO ,  KYUNGHO LEE

IPC: H01L27/146

Abstract: An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.