公开(公告)号：US11114174B2

公开(公告)日：2021-09-07

申请号：US16819374

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Jinbaek Song ,  Kangho Roh

IPC: G11C16/34 ,  G11C16/26 ,  G06N3/04 ,  G06K9/62 ,  G11C16/16

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US11715516B2

公开(公告)日：2023-08-01

申请号：US17391209

申请日：2021-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C7/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

CPC classification number: G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/14

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US11487448B2

公开(公告)日：2022-11-01

申请号：US17038371

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeonghui Kim ,  Jungmin Seo ,  Kangho Roh ,  Hyeongyu Min ,  Jooyoung Hwang

IPC: G06F3/06 ,  G06N20/00

Abstract: A method includes sampling input/output requests from a host to generate sampled input/output requests; classifying the sampled input/output requests into clusters using an unsupervised learning algorithm; determining a hot data range based on a characteristic of the clusters; and incorporating the determined hot data range into a hot data table.

公开(公告)号：US11081171B2

公开(公告)日：2021-08-03

申请号：US16838078

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US09858182B2

公开(公告)日：2018-01-02

申请号：US14735834

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooseok Chang ,  Kangho Roh ,  Jongwon Lee

IPC: G06F12/02 ,  G06F13/42

CPC classification number: G06F12/0253 ,  G06F12/0246 ,  G06F13/4282 ,  G06F2212/7201 ,  G06F2212/7205 ,  Y02D10/14 ,  Y02D10/151

Abstract: A garbage collection method of a data storage system having storage devices is provided. The method includes determining whether a garbage collection is needed in one of the storage devices, transferring a multicast garbage collection command from one of the storage devices to at least one other storage device in a write group through a multicast operation, and performing the garbage collection in one of the storage devices.