公开(公告)号：US11322206B2

公开(公告)日：2022-05-03

申请号：US17036060

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Chanha Kim ,  Kangho Roh ,  Seungkyung Ro ,  Yunjung Lee ,  Heewon Lee

IPC: G11C7/00 ,  G11C16/10 ,  G06N20/00 ,  G06F3/06 ,  G11C16/04 ,  H01L27/115

Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

公开(公告)号：US11631466B2

公开(公告)日：2023-04-18

申请号：US17239646

申请日：2021-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyun Choi ,  Youngdeok Seo ,  Kangho Roh

IPC: G06F12/00 ,  G11C16/26 ,  G06F3/06 ,  G06N3/04 ,  G06N3/08 ,  G11C16/10 ,  G11C16/16 ,  G11C11/56 ,  G11C16/04

Abstract: A storage device performs a read operation by restoring an ON cell count (OCC) from a power loss protection (PLP) area of a nonvolatile memory. The nonvolatile memory includes a memory blocks, a buffer memory and a controller. The buffer memory stores a first ON cell count (OCC1) indicating a number of memory cells turned ON by a first read voltage and a second ON cell count (OCC2) indicating a number of memory cells turned ON by a second read voltage among the memory cells connected to a reference word line. The controller stores the OCC1 for each of the memory blocks in the PLP area when a sudden power off occurs in the storage device.

公开(公告)号：US20210166764A1

公开(公告)日：2021-06-03

申请号：US17036060

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinwoo Hong ,  Chanha Kim ,  Kangho Roh ,  Seungkyung Ro ,  Yunjung Lee ,  Heewon Lee

IPC: G11C16/10 ,  G11C16/04 ,  G06N20/00 ,  G06F3/06

Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

公开(公告)号：US11928338B2

公开(公告)日：2024-03-12

申请号：US17393643

申请日：2021-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunkyo Oh ,  Sanghyun Choi ,  Kangho Roh

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0659 ,  G06F3/0679 ,  G06F2212/7211

Abstract: A method of measuring durability of a nonvolatile memory device that includes a plurality of memory blocks, the method including: periodically receiving a read command for a first memory block among the plurality of memory blocks; periodically performing a read operation on the first memory block based on the read command; periodically outputting at least one cell count value associated with the first memory block based on a result of the read operation; and periodically storing durability information associated with the first memory block in response to a periodic reception of the durability information, the durability information being obtained by accumulating the at least one cell count value.

公开(公告)号：US20210057025A1

公开(公告)日：2021-02-25

申请号：US16838078

申请日：2020-04-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yunjung Lee ,  Chanha Kim ,  Kangho Roh ,  Heewon Lee

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

Abstract: A nonvolatile memory device including: a memory cell array, the memory cell array including a plurality of cell strings, at least one of the cell strings including a plurality of memory cells stacked in a direction perpendicular to a surface of a substrate, at least one of the memory cells is a multi-level cell storing at least three bits; and a control logic circuit configured to control a page buffer to read a fast read page of the memory cells with one read voltage and at least two normal read pages of the memory cells with the same number of read voltages.

公开(公告)号：US09904478B2

公开(公告)日：2018-02-27

申请号：US15217957

申请日：2016-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangho Roh

IPC: G11C16/04 ,  G06F3/06 ,  G11C16/10

CPC classification number: G06F3/0613 ,  G06F3/0616 ,  G06F3/0634 ,  G06F3/0679 ,  G11C16/0483 ,  G11C16/10

Abstract: Provided are a storage device and a method for controlling thereof. Some embodiments include a method, comprising: receiving target performance information by a storage device; comparing the target performance information with maximum performance information by the storage device; and adjusting an incremental step pulse program (ISPP) operation performed on a memory cell of the storage device in response to the comparing of the target performance information with maximum performance information.

公开(公告)号：US12197767B2

公开(公告)日：2025-01-14

申请号：US17691758

申请日：2022-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungjun Yang ,  Kangho Roh

IPC: G06F3/06 ,  G06F13/20 ,  G06N20/00

Abstract: Disclosed is an operation method of a storage device supporting a multi-stream, which includes receiving an input/output request from an external host, generating a plurality of stream identifier candidates by performing machine learning on the input/output request based on a plurality of machine learning models that are based on different machine learning algorithms, generating a model ratio based on a characteristic of the input/output request, applying the model ratio to the plurality of stream identifier candidates to allocate a final stream identifier for the input/output request, and storing write data corresponding to the input/output request in a nonvolatile memory device of the storage device based on the final stream identifier.

公开(公告)号：US11715538B2

公开(公告)日：2023-08-01

申请号：US17395872

申请日：2021-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Jinbaek Song ,  Kangho Roh

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/16 ,  G06F18/214 ,  G06N3/045

CPC classification number: G11C16/3495 ,  G06F18/214 ,  G06N3/045 ,  G11C16/16 ,  G11C16/26

Abstract: A memory system includes a memory device including a plurality of blocks, a buffer storing degradation information regarding at least one of the plurality of blocks, and a memory controller configured to determine a degradation level of the block corresponding to the read request based on the degradation information, in response to a read request from a host, infer a read level corresponding to the read request based on the degradation level, and read data from the memory device based on the read level.

公开(公告)号：US20220253749A1

公开(公告)日：2022-08-11

申请号：US17497076

申请日：2021-10-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanha Kim ,  Youngeun Kim ,  Kangho Roh ,  Younghoon Jung ,  Mijung Cho

IPC: G06N20/20 ,  G11C16/26

Abstract: In a method of operating a storage device including a plurality of nonvolatile memories, reliability information of the storage device is predicted. A read operation on the storage device is performed based on a result of predicting the reliability information. In the predicting the reliability information of the storage device, a model request signal is outputted by selecting one of a plurality of machine learning models as an optimal machine learning model based on deterioration characteristic information and deterioration phase information. The model request signal corresponds to the optimal machine learning model. The plurality of machine learning models are used to generate first reliability information related to the plurality of nonvolatile memories. First parameters of the optimal machine learning model may be received based on the model request signal. The first reliability information is generated based on the deterioration characteristic information and the first parameters.

公开(公告)号：US11409441B2

公开(公告)日：2022-08-09

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonji Kim ,  Youngdeok Seo ,  Chanha Kim ,  Kangho Roh ,  Hyunkyo Oh ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.