公开(公告)号：US09825217B1

公开(公告)日：2017-11-21

申请号：US15360221

申请日：2016-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Kim ,  Keewon Kim ,  S. P. Stuart Parkin ,  Jaewoo Jeong ,  Mahesh Govind Samant

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3218 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.

公开(公告)号：US09761793B1

公开(公告)日：2017-09-12

申请号：US15157717

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Kim ,  Keewon Kim ,  Jaewoo Jeong ,  Stuart S. P. Parkin ,  Mahesh Govind Samant

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.