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公开(公告)号：US20240023458A1
公开(公告)日：2024-01-18
申请号：US17887042
申请日：2022-08-12
发明人： Dmytro Apalkov , Jaewoo Jeong , Ikhtiar
CPC分类号： H01L43/08 , H01L43/02 , H01L43/10 , H01L43/12 , H01L27/222
摘要： A spin-orbit torque magnetic random-access memory (SOT-MRAM) device includes a substrate, a spin orbit torque line above the substrate, a composite-metal-oxide seed layer above the spin orbit torque line, and a magnetic tunnel junction above the composite-metal-oxide seed layer. The magnetic tunnel junction includes a free layer above the composite-metal-oxide seed layer, a main tunneling barrier layer above the free layer, and a pinned layer above the main tunneling barrier layer.
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2.发明公开公开(公告)号：US20230413681A1
公开(公告)日：2023-12-21
申请号：US17807485
申请日：2022-06-17
发明人： Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Samant , . Ikhtiar , Jaewoo Jeong
CPC分类号： H01L43/02 , H01L27/222 , H01L43/10 , H01L43/12
摘要： A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.
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公开(公告)号：US20220068538A1
公开(公告)日：2022-03-03
申请号：US17127695
申请日：2020-12-18
发明人： Dmytro Apalkov , Jaewoo Jeong , Ikhtiar , Roman Chepulskyy
摘要： A magnetic device is described. The magnetic device includes a magnetic junction, a spin-orbit interaction (SO) line and a dipole-coupled layer. The magnetic junction includes a free layer. The SO line is adjacent to the free layer, carries a current in-plane and exerts a SO torque on the free layer due to the current passing through the SO line. The free layer being switchable between stable magnetic states using the SO torque. The SO line is between the free layer and the dipole-coupled layer. The dipole-coupled layer is magnetically coupled to the free layer. At least one of the free layer and the dipole-coupled layer has a damping of greater than 0.02.
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公开(公告)号：US20200243755A1
公开(公告)日：2020-07-30
申请号：US16260024
申请日：2019-01-28
摘要： A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0
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公开(公告)号：US20240213179A1
公开(公告)日：2024-06-27
申请号：US18507571
申请日：2023-11-13
发明人： Jaewoo Jeong
IPC分类号： H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
CPC分类号： H01L23/562 , H01L23/3128 , H01L23/49816 , H01L24/08 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0657 , H01L2224/08145 , H01L2224/08225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48147 , H01L2224/48227 , H01L2224/73215 , H01L2924/1815
摘要： A semiconductor package comprising a stack structure disposed on a package substrate and that includes a lower structure and an upper structure on the lower structure, the upper structure including a plurality of semiconductor chips offset from each other in a first horizontal direction and stacked in a cascade structure, a reinforcing structure on the upper structure and including a reinforcing chip and an interfacial layer covering an upper surface of the reinforcing chip, and an encapsulant covering the package substrate. The plurality of semiconductor chips include a first semiconductor chip disposed directly below the reinforcing structure and a second semiconductor chip disposed directly below the first semiconductor chip. The reinforcing structure covers an overhanging portion of the first semiconductor chip in which the first semiconductor chip does not overlap the second semiconductor chip in a vertical direction, and the interfacial layer and the encapsulant include the same material.
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6.发明公开公开(公告)号：US20240155950A1
公开(公告)日：2024-05-09
申请号：US18179588
申请日：2023-03-07
摘要： A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.
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公开(公告)号：US11756578B2
公开(公告)日：2023-09-12
申请号：US17318998
申请日：2021-05-12
发明人： Jaewoo Jeong , Sergey Faleev , Panagiotis Charilaos Filippou , Yari Ferrante , Stuart Stephen Papworth Parkin , Mahesh Samant
IPC分类号： G11B5/39 , G11C11/16 , G11C19/08 , H01F1/03 , H01F10/193 , H01F10/30 , H01F10/32 , H01F41/30 , H10N50/85 , H10N50/10 , H10N50/01
CPC分类号： G11B5/3909 , G11C11/161 , G11C11/1675 , G11C19/08 , H01F1/03 , H01F10/1936 , H01F10/30 , H01F10/324 , H01F41/302 , H10N50/01 , H10N50/10 , H10N50/85 , H01F10/3272 , H01F10/3286
摘要： A magnetic device and method for providing the magnetic device are disclosed. The magnetic device includes a multilayer structure and a magnetic layer. The multilayer structure includes alternating layers of A and E. A includes a first material. The first material includes at least one of Co, Ru, or Ir. The first material may include an IrCo alloy. E includes at least one other material that includes Al. The other material(s) may include an alloy selected from AlGa, AlSn, AlGe, AlGaGe, AlGaSn, AlGeSn, and AlGaGeSn. A composition of the multilayer structure is represented by A1-xEx, where x is at least 0.45 and not more than 0.55. The magnetic layer includes an Al-doped Heusler compound. The magnetic layer shares an interface with the multilayer structure.
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公开(公告)号：US20220165469A1
公开(公告)日：2022-05-26
申请号：US17100719
申请日：2020-11-20
发明人： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
摘要： A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.
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9.发明申请公开(公告)号：US20210167280A1
公开(公告)日：2021-06-03
申请号：US17174680
申请日：2021-02-12
发明人： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S.P. Parkin , Jaewoo Jeong , Mahesh G. Samant
摘要： A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
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公开(公告)号：US20210159402A1
公开(公告)日：2021-05-27
申请号：US16800779
申请日：2020-02-25
发明人： Ikhtiar , Jaewoo Jeong , Mohamad Towfik Krounbi , Xueti Tang
摘要： A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.
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