公开(公告)号：US09599760B2

公开(公告)日：2017-03-21

申请号：US14806082

申请日：2015-07-22

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Joungeun Yoo ,  Sang Ho Park ,  Tae-Rae Kim ,  Bok Soon Kwon ,  Ki Tae Park

IPC: G02B5/30 ,  C09K19/30 ,  G02B1/11 ,  C09K19/20

CPC classification number: G02B5/3016 ,  C09K19/2007 ,  C09K19/3068 ,  C09K19/46 ,  C09K2019/0448 ,  C09K2019/2035 ,  C09K2019/3083 ,  C09K2219/03 ,  G02B1/11 ,  G02B5/3083

Abstract: A composition for an optical film, including a first liquid crystal compound represented by the following Chemical Formula 1 and a second liquid crystal compound represented by the following Chemical Formula 2, wherein a difference between a solubility parameter of the first liquid crystal compound and a solubility parameter of the second liquid crystal compound is about 2.50 to about 2.90 wherein in Chemical Formulae 1 and 2, X, R1 to R3, Z, n, m, and p are the same as described in the detailed description.

公开(公告)号：US09406394B2

公开(公告)日：2016-08-02

申请号：US14726927

申请日：2015-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong Yoon ,  Ki Tae Park ,  Moo Sung Kim ,  Bo Geun Kim ,  Hyun Jun Yoon

IPC: G11C16/34 ,  G11C16/10 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

公开(公告)号：US08665649B2

公开(公告)日：2014-03-04

申请号：US13835409

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Tae Park

IPC: G11C16/04

CPC classification number: G11C16/10 ,  G11C11/5628

Abstract: A method programming a non-volatile memory device using an incremental step pulse programming (ISPP) scheme is disclosed. The method includes operating in a first program mode during which a program pulse width is constant and a program voltage is successively increased per ISPP cycle, and during which a program operation and a verify operation are alternately repeated, and operating in a second program mode during which the program pulse width is successively increased per ISPP cycle and the program voltage is constant, and during which the program operation and the verify operation are alternately repeated, wherein operation in the second program mode follows operation in the first program mode only when the program voltage equals a maximum value, or when a verification result count value satisfies a predetermined condition.

Abstract translation: 公开了使用增量步进脉冲编程（ISPP）方案对非易失性存储器件编程的方法。 该方法包括在编程脉冲宽度恒定并且每个ISPP周期连续增加编程电压的第一编程模式下操作，并且在该程序模式期间交替重复编程操作和验证操作，并且在第二编程模式期间以第二编程模式操作 其中编程脉冲宽度每个ISPP周期连续地增加，并且编程电压是恒定的，并且其中编程操作和验证操作被交替地重复，其中在第二程序模式下的操作仅在程序 电压等于最大值，或当验证结果计数值满足预定条件时。