公开(公告)号：US20230352591A1

公开(公告)日：2023-11-02

申请号：US17989944

申请日：2022-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Deok Han BAE ,  Myung Yoon UM ,  Yu Ri LEE ,  Sun Me LIM ,  Jun Su JEON

IPC: H01L29/78 ,  H01L29/417 ,  H01L23/528 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L29/7851 ,  H01L29/41791 ,  H01L23/5283 ,  H01L23/5226 ,  H01L27/0886

Abstract: A semiconductor device includes an isolation structure having first and second sidewalls opposite each other, a first fin-shaped pattern in contact with the first sidewall and extending in the second direction, a second fin-shaped pattern in contact with the second sidewall and extending in the second direction, a first gate electrode on the first fin-shaped pattern, a first source/drain contact on the first and second fin-shaped patterns and extending between the first gate electrode and the element isolation structure, and a wiring structure on and connected to the first source/drain contact, wherein the first source/drain contact includes a lower contact intersecting the first and second fin-shaped patterns, an upper contact protruding from the lower contact, and a dummy contact, the wiring structure being in contact with the upper contact and not with the dummy contact.

公开(公告)号：US20220013649A1

公开(公告)日：2022-01-13

申请号：US17185466

申请日：2021-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In Yeal LEE ,  Yoon Young JUNG ,  Jin-Wook KIM ,  Deok Han BAE ,  Myung Yoon UM

IPC: H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/51

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, an active pattern extending in a first direction on the substrate, a gate electrode extending in a second direction intersecting the first direction on the active pattern, a gate spacer extending in the second direction along side walls of the gate electrode, an interlayer insulating layer contacting side walls of the gate spacer, a trench formed on the gate electrode in the interlayer insulating layer, a first capping pattern provided along side walls of the trench, at least one side wall of the first capping pattern having an inclined profile, and a second capping pattern provided on the first capping pattern in the trench.

公开(公告)号：US20210118746A1

公开(公告)日：2021-04-22

申请号：US17134710

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi Gwan PARK ,  Jung Gun YOU ,  Ki Il KIM ,  Sug Hyun SUNG ,  Myung Yoon UM

IPC: H01L21/8238 ,  H01L21/762 ,  H01L29/66 ,  H01L27/092 ,  H01L21/8234 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.