公开(公告)号：US20190027495A1

公开(公告)日：2019-01-24

申请号：US16142637

申请日：2018-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11565

Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

公开(公告)号：US20180315770A1

公开(公告)日：2018-11-01

申请号：US15864410

申请日：2018-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hoon CHOI ,  Sunggil KIM ,  Seulye KIM ,  HongSuk KIM ,  Phil Ouk NAM ,  Jaeyoung AHN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L29/04 ,  H01L29/792 ,  H01L29/423

Abstract: A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.