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公开(公告)号：US20200266213A1
公开(公告)日：2020-08-20
申请号：US16870082
申请日：2020-05-08
发明人： Ji Hoon CHOI , Sung Gil KIM , Seulye KIM , Jung Ho KIM , Hong Suk KIM , Phil Ouk NAM , Jae Young AHN , Han Jin LIM
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11565
摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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公开(公告)号：US20190326321A1
公开(公告)日：2019-10-24
申请号：US16459337
申请日：2019-07-01
发明人： Sung Gil KIM , Seul Ye KIM , Hong Suk KIM , Jin Tae NOH , Ji Hoon CHOI , Jae Young AHN
IPC分类号： H01L27/11582 , H01L27/108 , H01L23/532 , H01L27/11565 , H01L29/06 , H01L23/00 , H01L25/065
摘要： A stack structure includes conductive layer patterns and interlayer insulating layer patterns alternately stacked on one another. A channel hole penetrates the stack structure. A dielectric layer is disposed on a sidewall of the channel hole. A channel layer is disposed on the dielectric layer and in the channel hole. A passivation layer is disposed on the channel layer and in the channel hole. The channel layer is interposed between the passivation layer and the dielectric layer. An air gap is surrounded by the passivation layer. A width of the air gap is larger than a width of the passivation layer.
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公开(公告)号：US20140366568A1
公开(公告)日：2014-12-18
申请号：US14244282
申请日：2014-04-03
发明人： Hong Suk KIM , Seung Hoon Kal , Myong Jong Kwon , Seung Jin Oh , Choong Hyo Jang , Yong Hwa Choi , Hayase Gaku , Sung Hun Hong
CPC分类号： F25D21/04 , F24F1/14 , F24F1/18 , F24F13/22 , F24F2013/221 , F25B1/005 , F28D1/0477 , F28D2021/0068 , F28D2021/0071 , F28F1/12 , F28F1/32 , F28F17/005 , F28F2245/02 , F28F2245/04
摘要： A heat exchanger includes a refrigerant pipe through which a refrigerant flows, and a plurality of fins coupled to an outer circumference surface of the refrigerant pipe, wherein each fin includes a first region disposed upstream with respect to an air flow direction, and a second region which forms a boundary with the first region and is disposed downstream with respect to the air flow direction, and wherein the first region and the second region have different surface energies in order to prevent formation of condensation water on the fin.
摘要翻译： 热交换器包括制冷剂流过的制冷剂管和联接到制冷剂管的外圆周表面的多个翅片，其中每个翅片包括相对于空气流动方向设置在上游的第一区域和第二区域 其与第一区域形成边界并且相对于空气流动方向设置在下游，并且其中第一区域和第二区域具有不同的表面能，以防止在翅片上形成冷凝水。
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公开(公告)号：US20220068968A1
公开(公告)日：2022-03-03
申请号：US17523014
申请日：2021-11-10
发明人： Ji Hoon CHOI , Sung Gil KIM , Seulye KIM , Jung Ho KIM , Hong Suk KIM , Phil Ouk NAM , Jae Young AHN , Han Jin LIM
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11565
摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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公开(公告)号：US20180364504A1
公开(公告)日：2018-12-20
申请号：US15780025
申请日：2016-11-08
发明人： Jun Cheol BAE , Chul BAIK , Hong Suk KIM , Byung Hwa SEO , Hyun Min SONG , Tatsuhiro OTSUKA
IPC分类号： G02F1/137 , G02F1/163 , G06F3/0488 , G06F3/041 , G02F1/1333 , G02F1/1347
摘要： One aspect of the present invention is to provide an electronic apparatus which is configured to provide a color writing function by means of the physical force of an external input means, and a control method thereof. More particularly, the present invention is to provide an electronic apparatus equipped with a plurality of liquid crystal panels in an electronic apparatus so that a plurality of colors can be written by the physical force of an external input means, and a control method thereof.
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公开(公告)号：US20180259804A1
公开(公告)日：2018-09-13
申请号：US15760577
申请日：2016-09-05
发明人： Jun Cheol BAE , Hyun Min SONG , Jong Hyun RYU , Ji Su JUNG , Yong Ho KIM , Hong Suk KIM , Byung Hwa SEO , Tatsuhiro OTSUKA
CPC分类号： G02F1/13718 , B60J3/04 , E06B9/24 , E06B2009/2417 , E06B2009/2464 , G02F1/13306 , G02F1/13318 , G02F1/137 , G02F1/13737 , G02F2001/13478 , G02F2202/04 , G02F2202/36 , G02F2203/48 , G06F3/01 , H04M1/725
摘要： The present disclosure is directed to providing to a smart window system capable of controlling a state of a display element (e.g., at least one of transparency, color, pattern, gradation degree, and displayed information) through various kinds of input devices and a control method thereof.In accordance with one aspect of the present disclosure, a smart window system may include a display element; an input device configured to receive a control command for the display element; and a controller configured to determine at least one of transparency, color, pattern, and gradation of the display element and information displayed on the display element on the basis of the control command.
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公开(公告)号：US20190027495A1
公开(公告)日：2019-01-24
申请号：US16142637
申请日：2018-09-26
发明人： Ji Hoon CHOI , Sung Gil KIM , Seulye KIM , Jung Ho KIM , Hong Suk KIM , Phil Ouk NAM , Jae Young AHN , Han Jin LIM
IPC分类号： H01L27/11582 , H01L23/528 , H01L27/11565
摘要： A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.
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